超宽带接收幅相多功能微波单片集成电路OA
Multifunctional Monolithic Microwave Integrated Circuit for Ultra-Wideband Receiver Amplitude-Phase
基于0.15 μm GaAs赝配高电子迁移率晶体管(pHEMT)工艺,研制了一款工作频率为2~12GHz的超宽带接收幅相多功能微波单片集成电路(MMIC).片上集成了低噪声放大器、数控衰减器、数控移相器、开关、13位串口数字电路及电源调制电路,整体尺寸为4.80mm×4.35mm,该MMIC在超宽带范围内具备高移相精度、低噪声系数与低功耗等优势.测试结果表明,在2~12 GHz频带内,小信号增益大于29 dB,噪声系数小于2.5 dB,移相均方根(RMS)误差小于3°,衰减RMS误差小于0.35dB,芯片总功耗为0.37 W.
Based on a 0.15 μm GaAs pseudomorphic high electron mobility transistor(pHEMT)process,a multifunctional monolithic microwave integrated circuit(MMIC)for ultra-wideband receiver amplitude-phase is developed,operating at a frequency of 2-12 GHz.The chip integrates a low noise amplifier,digitally controlled attenuator,digitally controlled phase shifter,switches,13-bit serial digital circuit and power modulation circuit,with a compact size of 4.80 mm ×4.35 mm.The MMIC exhibits high phase-shifting accuracy,low noise figure and low power consumption across the ultra-wideband range.Measurement results demonstrate that from 2 GHz to 12 GHz,the small signal gain of the MMIC is above 29 dB and the noise figure is below 2.5 dB.The root mean square(RMS)phase error and RMS attenuation error are below 3° and 0.35 dB.The total power consumption is 0.37 W.
秦昌;杨清愉;胡远圣;赵桐;尤红权;葛逢春;张巍
南京电子器件研究所,南京 210016南京电子器件研究所,南京 210016南京电子器件研究所,南京 210016南京电子器件研究所,南京 210016南京电子器件研究所,南京 210016南京电子器件研究所,南京 210016南京电子器件研究所,南京 210016
信息技术与安全科学
超宽带多功能移相器衰减器GaAs
ultra-widebandmultifunctionphase shifterattenuatorGaAs
《电子与封装》 2026 (5)
46-51,6
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