Boosting PZT ferroelectric and optoelectronic properties for intelligent recognition via strain relaxation control through buffer layer thickness optimizationOA
In the modern era marked by rapid technological advancements,ferroelectric materials have gradually emerged as highly promising candidates for a wide range of applications,including ferroelectric memories,sensors,and optoelectronic devices,due to their distinctive polarization characteristics.A common strategy to address the low ferroelectric polarization caused by lattice mismatch between the substrate and ferroelectric film is the insertion of a buffer layer.However,a thicker buffer layer tends to promote dislocation formation,which relaxes epitaxial strain and thereby deteriorates ferroelectric polarization,this mechanism has yet to be systematically explored.In this study,a method is presented that alleviates strain relaxation by modulating interfacial stress through precise control of the buffer layer thickness,thereby enhancing the ferroelectric polarization performance.Here,to reduce the strain between the PbZr_(1-x)Ti_(x)O_(3)(PZT)and substrates,which could induce pronounced lattice mismatch,increased defect density,and consequently reduced ferroelectric performance,a SrRuO_(3)(SRO)buffer layer of optimized thickness was inserted between SrTiO_(3)(STO)and PZT to mitigate the lattice mismatch.This approach increased the maximum polarization from 126.3 to 142.6μC/cm^(2),the remanent polarization from 86.52 to 116.03μC/cm^(2),and enhanced the photocurrent by 2.2μA.On this basis,the material stack provided robust support for an intelligent traffic-intersection recognition system,achieving a recognition accuracy of 93.23%under diverse weather conditions.The methodology elucidated the fundamental interplay between strain and ferroelectric/photoelectric properties,offering new insights and strategies for the performance optimization of ferroelectric materials.
Yue Hou;Kangbo Zhao;Haoyuan Tian;Zhijin Duo;Mengya Guo;Weifeng Zhang;Kunpeng He;Shuohua Ma;Jianxin Guo;Jianhui Zhao;Yifei Pei;Xiaobing Yan
College of Physics Science and Technology,Hebei University,Baoding 071002,ChinaKey Laboratory of Brain like Neuromorphic Devices and Systems of Hebei Province,College of Electronic Information Engineering,Hebei University,Baoding 071002,ChinaCollege of Physics Science and Technology,Hebei University,Baoding 071002,ChinaCollege of Physics Science and Technology,Hebei University,Baoding 071002,ChinaCollege of Physics Science and Technology,Hebei University,Baoding 071002,ChinaKey Laboratory of Brain like Neuromorphic Devices and Systems of Hebei Province,College of Electronic Information Engineering,Hebei University,Baoding 071002,ChinaCollege of Physics Science and Technology,Hebei University,Baoding 071002,ChinaCollege of Physics Science and Technology,Hebei University,Baoding 071002,ChinaCollege of Physics Science and Technology,Hebei University,Baoding 071002,ChinaKey Laboratory of Brain like Neuromorphic Devices and Systems of Hebei Province,College of Electronic Information Engineering,Hebei University,Baoding 071002,ChinaCollege of Physics Science and Technology,Hebei University,Baoding 071002,ChinaCollege of Physics Science and Technology,Hebei University,Baoding 071002,China Key Laboratory of Brain like Neuromorphic Devices and Systems of Hebei Province,College of Electronic Information Engineering,Hebei University,Baoding 071002,China
通用工业技术
strain engineeringrectangularity optimizationpolarization regulationphotoelectric sensing
《Nano Research》 2026 (3)
P.1018-1028,11
supported by the National key R&D plan“nano frontier”key special project(No.2021YFA1200502)Cultivation projects of national major R&D project(No.92164109)the National Natural Science Foundation of China(No.62504069)the Young Top Talent Program of the Hebei Provincial Department of Education(No.BJ2026011)the Support Program for the Top Young Talents of Hebei Province(No.70280011807)Interdisciplinary Research Program of Natural Science of Hebei University(No.DXK202101)Institute of Life Sciences and Green Development(No.521100311)Outstanding young scientific research and innovation team of Hebei University(No.605020521001)the Natural Science Foundation of Hebei Province(No.F2025201008)Special Support Funds for National High-level Talents(No.041500120001)High-level Talent Research Startup Project of Hebei University(No.521100223225)Baoding Science and Technology Plan Project(No.2172P011 and 2272P014)the Hong Kong Scholars Program(No.XJ2025016)the Graduate Innovation Ability Cultivation Funding Project of Hebei University(No.HBU2024SS019).
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