Synthesis of heptanary monolayer medium-entropy alloy via chemical vapor deposition for high-performance infrared photodetectorsOA
Entropy engineering has emerged as a promising paradigm for tailoring the electronic and photoelectric properties of materials.Although high-entropy transition metal sulfides have been achieved,entropy engineering in two-dimensional(2D)tellurides remains challenging.In this work,we report the successful synthesis of a 1T''monolayer heptanary medium-entropy(ME)alloy(Mo_(a)W_(b)Fe_(c)Co_(d)S_(x)Se_(y)Te_(z))via a one-step chemical vapor deposition method.Advanced characterizations,including scanning transmission electron microscopy,energy dispersive X-ray spectroscopy,and electron energy loss spectroscopy confirm the uniform atomic-level distribution of the seven constituent elements within the alloy.The 1T''ME alloy device exhibits a high drain current of~6.5 mA,which is 216 times higher than the~30μA observed in pristine 1T''MoTe_(2).Furthermore,the 1T''ME alloy photodetector exhibits responsivities of 27.92 A/W at 1064 nm and 63.74 A/W at 1550 nm,outperforming those of the pristine 1T''MoTe_(2)by more than two orders of magnitude.This remarkable enhancement is attributed to the reduced Schottky barrier(15.9 meV)at the 1T''ME alloy/electrode interface,along with the enhanced conductance(0.43 S)and reduced thermal activation energy(4.1 meV)in the 1T''ME alloy,collectively facilitating more efficient carrier injection and transport.Our work provides a distinct pathway for tailoring the properties of transition metal dichalcogenides through entropy engineering and offers valuable insights for the design of high-performance infrared photodetectors.
Lin Jia;Ruichun Luo;Chunyu Zhao;Jingbo Pang;Xiaoyu Zheng;Denan Kong;Ping Wang;Yang Yang;Weikang Dong;Longyi Fu;Dian Li;Tianyu Zang;Shoujun Zheng;Wu Zhou;Jiadong Zhou;Yao Zhou
Centre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,ChinaSchool of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,ChinaCentre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,ChinaSchool of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,ChinaAdvanced Research Institute of Multidisciplinary Science and School of Chemistry and Chemical Engineering,Beijing Institute of Technology,Beijing 100081,ChinaCentre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,ChinaCentre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,ChinaCentre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,ChinaCentre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,ChinaCentre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,ChinaCentre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,ChinaCentre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,ChinaCentre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,ChinaSchool of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,ChinaCentre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE),School of Physics,Beijing Institute of Technology,Beijing 100081,ChinaAdvanced Research Institute of Multidisciplinary Science and School of Chemistry and Chemical Engineering,Beijing Institute of Technology,Beijing 100081,China
信息技术与安全科学
chemical vapor depositionmedium-entropymonolayertelluridesphotodetector
《Nano Research》 2026 (5)
P.1068-1076,9
supported by the National Key R&D Program of China(Nos.2022YFA1203901 and 202221855043)the National Natural Science Foundation of China(Nos.62174013,92265111,52450014,and W2412065)Beijing National Science Foundation for Distinguished Young Scholars(No.JQ23007)Beijing Natural Science Foundation(No.L233003)China Postdoctoral Science Foundation Funded Project(No.BX2021301)。
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