Optical Switching of Robust Ferroelectric Polarization on Epitaxial Hf_(0.5)Zr_(0.5)O_(2)Integrated with BaTiO_(3)OA
Optical switching of ferroelectric polarization is of interest for wireless and energy-efficient control of logic states.So far,this phenomenon has been widely demonstrated only in ferroelectric perovskites,while studies on other emerging ferroelectrics remain limited.In this regard,the paradigmatic example of a technologically relevant ferroelectric material is HfO_(2).However,HfO_(2)has a very wide bandgap,limiting light absorption.So far,the proposed strategies to enhance light absorption in HfO_(2)-based systems are detrimental to ferroelectric properties,i.e.,bandgap lowering or on-purpose defect introduction,which reduce switchable polarization and increase the presence of leakage currents.Here,we show that good ferroelectric properties,i.e.,sizeable polarization(up to 15μC cm^(-2)),low leakage current(under 10^(-6)A cm^(-2)),high endurance(up to 108 cycles)and fast switching(<50 ns),can be achieved in epitaxial Hf0.5Zr0.5O_(2)films through an alternative strategy,BaTiO_(3)capping.While ferroelectric properties are remarkable,we demonstrate that the presence of BaTiO_(3)allows light absorption and the concomitant electric field generation,as supported by density functional theory calculations,which enables optical switching of polarization in Hf0.5Zr0.5O_(2)under 405 nm illumination.It is observed that optical switching is more efficient in films with thicker BaTiO_(3)capping layer.The high polarizability of BaTiO_(3)contributes to minimizing degradation in the ferroelectric response of the system.The results presented here indicate that appropriate designs can be followed to obtain optical switching of polarization in ferroelectric HfO_(2)while preserving main functional properties.
Wenjing Dong;Huan Tan;Jingye Zou;Alberto Quintana;Tingfeng Song;César Magén;Claudio Cazorla;Florencio Sánchez;Ignasi Fina
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB,08193 Bellaterra,Barcelona,SpainDepartament de Física, Universitat Autònoma de Barcelona,08193 Cerdanyola del Valles,SpainInstitut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB,08193 Bellaterra,Barcelona,SpainInstitut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB,08193 Bellaterra,Barcelona,SpainInstitut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB,08193 Bellaterra,Barcelona,SpainInstituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza,50009 Saragossa,Spain Departamento de Física de la Materia Condensada, Universidad de Zaragoza,50018 Saragossa,SpainGroup of Characterization of Materials, Departament de Física, Universitat Politècnica de Catalunya, Campus Diagonal Besòs,Av.Eduard Maristany 10-14,08019 Barcelona,Spain Research Center in Multiscale Science and Engineering, Universitat Politècnica de Catalunya, Campus Diagonal-Besòs,Av.Eduard Maristany 10-14,08019 Barcelona,Spain Institució Catalana de Recerca I Estudis Avançats (ICREA),Passeig Lluis Companys 23,08010 Barcelona,SpainInstitut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB,08193 Bellaterra,Barcelona,SpainInstitut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB,08193 Bellaterra,Barcelona,Spain
数理科学
HfO2Hafnium oxideMultilayersHf0.5Zr0.5O2FerroelectricOptoelectric
《Nano-Micro Letters》 2026 (7)
P.540-554,15
Financial support from the Spanish Ministry of Science,Innovation and Universities(MCIN/AEI/https://doi.org/10.13039/501100011033)through the Severo Ochoa MATRANS42(CEX2023-001263-S)and CEX2023-001286-S,PDC2023-145874-I00,PID2023-147211OB-C21,PID2023-147211OB-C22 and TED2021-130453B-C21 projects,from Generalitat de Catalunya(2021 SGR 00804)and from Gobierno de Aragon project E13_23R is acknowledgedW.D.is financially supported by China Scholarship Council(CSC)with No.202208310089。
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