Efficient and PureⅠ-Ⅲ-ⅥAIGS Quantum Dot-Based Light-Emitting Diodes via Ligand-Reshaped Surface StateOA
TheⅠ-Ⅲ-Ⅵsilver indium gallium sulfide(AIGS)quantum dots(QDs)have gained extensive attention owing to their tunable emission wavelength and ecofriendly composition;however,the performance of AIGS QD-based light-emitting diodes(QLEDs)remains constrained by suboptimal surface state,significantly lagging behind that of other heavy-metal-containing QD counterparts.Herein,we propose a ligand-reshaped strategy aimed at optimizing the surface state of AIGS QDs to enhance the performance of QLEDs.A polyfunctional ligand,dimercaptosuccinic acid(DSA),is introduced to reshape the QD surface through passivation of uncoordinated Ga^(3+)and suppression of S vacancies.After DSA passivation,the QDs exhibit not only exceptional luminescent properties with a photoluminescence quantum yield of 89%,but also pure emission with a narrow full width at half maximum of 31 nm.Concurrently,DSA passivation markedly improves the electrical transport characteristic of QDs,thereby ensuring efficient carrier injection.Resultantly,the reshaped QLED achieves a maximum peak external quantum efficiency of 8.4%along with a narrow FWHM of 31 nm,representing a record performance reported thus far for the AIGS system.The proposed DSA ligand-reshaped strategy endows AIGS QLEDs with both high efficiency and color purity,substantially advancing their potential for the application in QD lightings and display technologies.
Leimeng Xu;Jianpeng Zhao;Jindi Wang;Jisong Yao;Shalong Wang;Zhi Wu;Jizhong Song
Key Laboratory of Materials Physics of Ministry of Education,Laboratory of Zhongyuan Light,School of Physics,Zhengzhou University,Daxue Road 75,Zhengzhou 450051,People''s Republic of ChinaKey Laboratory of Materials Physics of Ministry of Education,Laboratory of Zhongyuan Light,School of Physics,Zhengzhou University,Daxue Road 75,Zhengzhou 450051,People''s Republic of ChinaKey Laboratory of Materials Physics of Ministry of Education,Laboratory of Zhongyuan Light,School of Physics,Zhengzhou University,Daxue Road 75,Zhengzhou 450051,People''s Republic of ChinaKey Laboratory of Materials Physics of Ministry of Education,Laboratory of Zhongyuan Light,School of Physics,Zhengzhou University,Daxue Road 75,Zhengzhou 450051,People''s Republic of ChinaKey Laboratory of Materials Physics of Ministry of Education,Laboratory of Zhongyuan Light,School of Physics,Zhengzhou University,Daxue Road 75,Zhengzhou 450051,People''s Republic of ChinaKey Laboratory of Materials Physics of Ministry of Education,Laboratory of Zhongyuan Light,School of Physics,Zhengzhou University,Daxue Road 75,Zhengzhou 450051,People''s Republic of ChinaKey Laboratory of Materials Physics of Ministry of Education,Laboratory of Zhongyuan Light,School of Physics,Zhengzhou University,Daxue Road 75,Zhengzhou 450051,People''s Republic of China
信息技术与安全科学
Quantum dotsSilver indium gallium sulfideQD-based light-emitting diodesExternal quantum efficiencyColor purity
《Nano-Micro Letters》 2026 (7)
P.616-628,13
supported by National Natural Science Foundation of China(Grant Nos.52572185,52272166,22205214,and 12204427)Natural Science Foundation of Henan Province of China(Grant No.222300420299).
评论