首页|期刊导航|液晶与显示|氧化物半导体薄膜晶体管的研发现状与发展趋势分析

氧化物半导体薄膜晶体管的研发现状与发展趋势分析OA

Analysis of research status and development trends in oxide semiconductor thin-film transistors

中文摘要英文摘要

氧化物半导体薄膜晶体管(Oxide Semiconductor Thin-film Transistor,OS TFT)以其高迁移率、优良均匀性与低制造成本等优势,已成为高端显示技术的核心驱动元件,并逐步向传感、存储、类脑计算等集成系统领域拓展.本文基于Web of Science与Incopat数据库,对2016~2025年间的OS TFT领域的科研论文与专利数据进行了系统性分析.研究发现,全球研发活动高度集中于东亚地区,中国与韩国在论文与专利产出方面领先.然而,该领域存在明显的学术-产业失衡:90%以上论文来自高校及科研院所,而81.01%的专利由企业持有,产学研转化不足.同时,专利集中度偏低,技术壁垒尚未形成;上游关键材料溅射靶材仍由日本主导(占比54.55%),对中国产业链安全构成潜在风险.未来,OS TFT将突破传统显示驱动,与传感、存储与类脑计算等领域深度融合,本文就其在这些领域中的发展趋势及存在问题进行了分析.

Oxide semiconductor thin-film transistor(OS TFT)has become a core driving component of high-end display technology due to its advantages such as high mobility,excellent uniformity and low manufacturing cost,and is gradually expanding into integrated system fields such as sensors,memory,and neuromorphic computing.Based on the Web of Science and Incopat databases,this paper conducts a systematic analysis on the scientific research papers and patent data in the field of OS TFT from 2016 to 2025.Research has found that global R&D activities are highly concentrated in East Asia,with China and South Korea leading in the output of papers and patents.However,there is a clear academic-industry imbalance in this field:over 90%of the papers come from universities and research institutes,while 81.01%of the patents are held by enterprises,and the transformation of research into applications is insufficient.Meanwhile,the concentration of patents is relatively low,and technological barriers have yet to be formed.The key upstream material,sputtering targets,are still dominated by Japan(accounting for 54.55%),posing a potential risk to the security of China's industrial chain.In the future,OS TFT is poised to move beyond conventional display driving,forging deep convergence with sensor,memory,and neuromorphic computing.

熊雨婷;任俊彦;梁凌燕;曹鸿涛

中国科学院 宁波材料技术与工程研究所 原子尺度与微纳制造实验室,浙江 宁波 315201||中国科学院大学 材料科学与光电技术学院,北京 100049中国科学院 宁波材料技术与工程研究所 原子尺度与微纳制造实验室,浙江 宁波 315201中国科学院 宁波材料技术与工程研究所 原子尺度与微纳制造实验室,浙江 宁波 315201中国科学院 宁波材料技术与工程研究所 原子尺度与微纳制造实验室,浙江 宁波 315201||中国科学院大学 材料科学与光电技术学院,北京 100049

信息技术与安全科学

氧化物半导体薄膜晶体管显示传感存储类脑计算

oxide semiconductor thin-film transistorsdisplaysensormemoryneuromorphic computing

《液晶与显示》 2026 (4)

509-522,14

国家重点研发计划(No.2024YFB3614200)Supported by National Key Research and Development Program of China(No.2024YFB3614200)

10.37188/CJLCD.2026-0036

评论