P-NiO/β-Ga2O3异质结横向肖特基势垒二极管电学特性仿真研究OA

Gallium oxide(β-Ga2O3)is endowed with broad application prospects in the field of power devices,as it possesses a wide bandgap,a high critical breakdown electric field,and low-cost substrates.However,the development of β-Ga2O3 homojunction Schottky barrier diodes(SBD)is restricted by the bottleneck of P-type doping technology.To address this issue,a P-NiO/β-Ga2O3 heterojunction SBD structure was proposed,in which P-NiO was used to replace P-typeβ-Ga2O3.The effects of P-NiO doping concentration,P-NiO thickness(W),and anode length(La)on the electrical properties of devices were studied by means of Sentaurus TCAD software.The results show that the increase of P-NiO doping concentration leads to the expansion of the depletion region to the side of the β-Ga2O3 material,resulting in the improvement of the uniformity of the electric field distribution.When the P-NiO doping concentration is 3×1018 cm-3,the performance is the best.At this time,the specific on-resistance(Ron,sp)is 1.411 mΩ·cm2,the reverse breakdown voltage is 3 312.2 V,and the power figure of merit(PFOM)is 7.77 GW/cm2.La and W are further optimized to alleviate the edge electric field concentration effect.Finally,the Ron,sp of the device reduces to 0.823 mΩ·cm2,the reverse breakdown voltage increases to 3 638.3 V,and the PFOM reaches 16.08 GW/cm2.The structure of this paper provides a theoretical basis for the design and development of high performanceβ-Ga2O3 SBD.