氧化镓薄膜外延生长、掺杂调控与缺陷控制研究进展OA

Gallium oxide has emerged as a prominent ultrawide bandgap semiconductor material.Its outstanding physical properties,including a bandgap of approximately 4.9 eV and a breakdown electric field strength of 8 MV/cm,combined with the unique capability of producing large-size single crystal substrates via melt growth methods,have positioned it at the forefront of research on the high-power electronic devices,radio-frequency front-end devices,and solar-blind ultraviolet photodetection.In recent years,substantial advances has been made in substrate preparation,epitaxial growth,and device processing.Epitaxial films serve as a critical bridge between substrates and devices,whose quality directly determines the performance limits of the final devices.Doping control and defect management during epitaxial growth are considered a core challenge in the field.This review provides a systematic overview of the research status and development trends of β-Ga2O3 epitaxial films.It begins by introducing the research background,crystal structure,and fundamental physical properties of gallium oxide.This review then provides a detailed assessment of progress in major epitaxial growth techniques,including hydride vapor phase epitaxy,metalorganic chemical vapor deposition,and molecular beam epitaxy,with emphasis on key strategies such as the suppression of background carrier concentration,precise control of n-type doping,high-rate growth of thick films,and inhibition of defects.The significant challenge of achieving p-type doping is analyzed,and its physical mechanisms along with the latest research developments are summarized.Furthermore,recent achievements in the heteroepitaxy of β-Ga2O3,α-Ga2O3 and ε-Ga2O3 are summarized.Finally,based on current technical bottlenecks and future application requirements,prospects for the development of gallium oxide epitaxial technology are presented,with the aim of providing a useful reference for both fundamental research and industrial applications in this field.