Photoresist systems in floating T-gate fabrication for GaN high electron mobility transistorsOA
Photoresist systems in floating T-gate fabrication for GaN high electron mobility transistors
Shili Xiang;Zhipeng Yu;Hong Yin;Qichao Ding;Jun Liu;Hao Hu;Bo Zhao;Shuangzan Lu;Fan Huang;Joao Cunha;José Rodrigues
JFS Laboratory,Wuhan 430206,ChinaInternational Iberian Nanotechnology Laboratory(INL),Av.Mestre Jose Veiga,4715330,Braga,PortugalInternational Iberian Nanotechnology Laboratory(INL),Av.Mestre Jose Veiga,4715330,Braga,Portugal||Key Laboratory of Hunan Province for Advanced Carbon-based Functional Materials,School of Chemistry and Chemical Engineering,Hunan Institute of Science and Technology,Yueyang 414006,ChinaJFS Laboratory,Wuhan 430206,ChinaJFS Laboratory,Wuhan 430206,ChinaJFS Laboratory,Wuhan 430206,ChinaJFS Laboratory,Wuhan 430206,ChinaJFS Laboratory,Wuhan 430206,ChinaJFS Laboratory,Wuhan 430206,ChinaInternational Iberian Nanotechnology Laboratory(INL),Av.Mestre Jose Veiga,4715330,Braga,PortugalInternational Iberian Nanotechnology Laboratory(INL),Av.Mestre Jose Veiga,4715330,Braga,Portugal
GaN HEMTsFloating T-gateE-Beam photoresistsFabrication techniques
GaN HEMTsFloating T-gateE-Beam photoresistsFabrication techniques
《纳米材料科学(英文版)》 2026 (3)
518-533,16
This work was supported by the National Natural Science Foundation of China(Nos.52271211 and 22405080),the Natural Science Founda-tion of Hubei Province of China(Nos.2023AFB547 and 2022CFB858)the Guang dong Academy of Sciences(No.2021GDASYL-20210103077)the Science and technology innovation Program of Hunan Province of China(No.2023RC3185),and the HORIZON-Marie Skłodowska-Curie Actions-2021-PF(No.101065098),European Union.We also thank the Process Center of Hubei Jiufengshan Laboratory(JFS)for their guidance,which was helpful to widen the view on the subject.
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