半导体用主流金属前驱体的现况及发展OA

Based on their different applications in integrated circuit manufacturing,semiconductor metal precursors are primarily divided into two categories:high-k precursors for high-k thin films and metal layer precursors for metal layer thin films.As Complementary Metal-Oxide-Semiconductor(CMOS)device feature sizes shrink below 45 nm,SiO2 can no longer meet the performance and power consumption requirements as a gate dielectric material,making the replacement of SiO2 with metal high-k materials an inevitable choice.Currently,HfO2/SiO2 stacks paired with a dipole layer LaOx are predominantly used in logic circuits,while DRAM memory chips have transitioned from the previous ZrO2/Al/ZrO2 stack structure to a multicomponent system based on ZrxHfyO,combined with other metal high-k stacks or dopants.However,an inherent trade-off of high-k dielectric materials is that a high dielectric constant is accompanied by a small band gap.Therefore,doping is necessary to form ternary or more complex multicomponent systems,leveraging the high-k value or high band gap characteristics of individual materials to achieve complementary performance.Additionally,as technology nodes shrink,the importance of advanced metal layers is increasingly prominent.For example,TaN is used as a barrier layer in back-end-of-line interconnects due to its excellent diffusion barrier properties and thermal stability.Mo,with its low resistivity and good scalability,has become a promising metal layer material in NAND memory chips.To meet the demands of advanced processes,metal layer precursors must possess high purity,high volatility,high stability,high reactivity,and good interfacial compatibility with adjacent materials.Based on past research achievements,this paper will summarize the high-k and metal precursors commonly used in existing process routes,along with related quality and packaging cylinder requirements.Furthermore,following the latest research and industrial roadmaps,it will provide some predictions regarding the future development directions of high-k and metal precursors for semiconductors,aiming to offer guidance for the existing industry and ultimately facilitate the development of novel metal high-k precursor materials suitable for industrialization.