首页|期刊导航|中北大学学报(自然科学版)|4d族过渡元素掺杂对Mg2Sn(022)/Mg(0001)界面性质的影响

4d族过渡元素掺杂对Mg2Sn(022)/Mg(0001)界面性质的影响OA

Effects of 4d Transition Group Elements on the Property of Mg2Sn(022)/Mg(0001)Interface

中文摘要英文摘要

界面作为材料中重要的微观结构组织,对合金的性能有着至关重要的影响.从微观上深入理解合金基体与析出相组成界面的稳定性,对于分析界面析出相的强化机制具有重大的意义.为了改善Mg-Sn合金的稳定性,本文将4d族过渡元素掺杂到由Mg基体与其析出相Mg2Sn构建的Mg2Sn(022)/Mg(0001)界面模型中,采用第一性原理的方法寻找改善界面结合强度的元素,并根据界面处原子间电子转移的情况和键长变化及原子的电荷分布分析了掺杂4d族过渡元素对界面稳定性的影响机理.结果表明:掺杂4d族过渡元素后,Mg2Sn(022)/Mg(0001)界面的黏附能均高于未掺杂界面.可见,掺杂4d族过渡元素均可改善Mg2Sn(022)/Mg(0001)界面的稳定性,且Ru元素掺杂的界面稳定性最高.此外,界面处原子之间的键长越小,原子间转移的电荷越多,界面越稳定.通过差分电荷密度可知,Ru元素掺杂的界面中,Ru原子周围的电荷分布呈明显的方向性,这是由于界面处Mg原子的一部分电子转移到Ru原子附近,一部分转移到Sn原子周围,在界面处形成电荷共享区域,原子间的结合强度增加.

As an important microstructure organization in materials,the interface has a crucial effect on the properties of alloys.In order to analyse the strengthening mechanism of the interface precipitated phase,it is of great significance to understand the stability of the interface composed with the alloy matrix and its pre-cipitated phase on a micro level.In order to improve the stability of Mg-Sn alloy,based on the first-principles calculation,4d transition group elements were doped into the Mg2Sn(022)/Mg(0001)interface model constructed by the magnesium matrix and its precipitates Mg2Sn to investigate the beneficial elements that could improve the bonding strength of the interface.The influence mechanism of doping 4d transition elements on the interface stability was analyzed based on the electron transfer and the bond length between the atoms of the interface,and the charge distribution of atoms.The results show that the adhesion energy of the interface is increased with 4d transition group elements doped.The stability of the Mg2Sn(022)/Mg(0001)interface is improved,and the interface with Ru elements doped possesses the highest stability.In addition,it is found that the larger the interface adhesion energy,the smaller the bond length and the more charge transferred between the atoms of the interface.Based on the differential charge density,it is also found that the charge distribution is directional around the Ru atoms at the interface doped.Some of the charge of Mg atoms is transferred to Ru atoms,and some are transferred to Sn atoms at the interface,and the shared charges are found at the interface,which enhances the interaction between atoms.

张永梅;王福容;赵宇宏

中北大学 半导体与物理学院,山西 太原 030051||中北大学 教育部共建铝/镁材料研发应用协同创新中心,山西 太原 030051中北大学 半导体与物理学院,山西 太原 030051||中北大学 教育部共建铝/镁材料研发应用协同创新中心,山西 太原 030051中北大学 教育部共建铝/镁材料研发应用协同创新中心,山西 太原 030051||中北大学 材料科学与工程学院,山西 太原 030051

数理科学

第一性原理过渡元素界面电子结构

first-principletransition group elementsinterfaceelectronic structure

《中北大学学报(自然科学版)》 2026 (2)

171-176,6

国家自然科学基金资助项目(52074246,52275390,52205429,52201146)国防基础科研项目(JCKY2020408B002)山西省重点研发计划项目(202102050201011,202202050201014)

10.62756/jnuc.issn.1673-3193.2025.10.0016

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