P-NiO/β-Ga2O3异质结肖特基二极管电学特性仿真OA

Due to the difficulty in doping gallium oxide to achieve P-type,it is challenging to fabricate homogeneous PN junction diodes,which fail to meet the requirements for high-voltage Schottky diodes in high-power applications.A P-NiO/β-Ga2O3 heterojunction Schottky diode structure based on P-NiO com-position is proposed.The electrical properties of 3 kinds of PN Schottky diodes with P-NiO protection ring,field plate-assisted P-NiO protection ring,and field plate-assisted junction barrier structure are mainly studied.Simulation results show that the field plate structure can effectively alleviate the electric field concentration effect.The reverse breakdown voltage of the field-aided barrier structure in the β-Ga2O3 PN junction diode shows significant improvement.Compared with the P-NiO protection ring structure(2 536.4 V)and the field-aided P-NiO protection ring structure(2 338.2 V),when the P-NiO doping concentration reaches 3×1018 cm-3,the breakdown voltage reaches 3 312 V,representing increases of 30.6%and 41.6%respectively.The device's power factor reaches 7.02 GW/cm2,achiev-ing a 100%improvement over conventional structures(3.51 GW/cm2)and demonstrating superior perfor-mance compared to other configurations,the maximum value of P-NiO protective ring structure(4.15 GW/cm2)was increased by 69.1%.The research in this paper provides a theoretical basis for the development of high-performance β-Ga2O3 SBD devices.