高Mg浓度Zn1-xMgxO薄膜的铁电性能研究OA

As an emerging wurtzite ferroelectric,Zn ₁-ₓMgₓO has become a focal point in ferroelectric research.However,its narrow composition window has limited practical applications in non-volatile memory devices.Using reactive magnetron sputtering,Zn₁-ₓMgₓO thin films were grown on(100)-Si sub-strates at room temperature,extending the ferroelectric composition range to 0.37≤x≤0.54.X-ray dif-fraction(XRD)results indicate that all films exhibit good crystallinity with a c-axis preferred orientation.Notably,the coexistence of rock-salt and wurtzite phases was observed in films with x>0.48.Scanning electron microscopy(SEM)reveals that a gradual morphological transition of grain clusters from dome-like to quadrilateral configurations is induced by the increased Mg content.Electrical characterization dem-onstrates composition-dependent ferroelectric properties:remanent polarization(Pr)decreases from 74 μC·cm-2 to 35 μC·cm-2,while coercive field(Ec)remains below 3 MV·cm⁻¹.The reduction in Pr likely originates from the increased fraction of non-polar phases,whereas the rise in Ec may be associated with the combined effects of interfacial stress and Mg doping.