A novel split gate and contact-field-plate LDMOS with enhanced BV-Ron,sp trade-off and improved FOMOA
A novel split gate and contact-field-plate LDMOS with enhanced BV-Ron,sp trade-off and improved FOM
Yiting Ye;Xiaoyun Huang;Yixian Song;Kai Xu
College of Integrated Circuits,Zhejiang University,Hangzhou 311200,ChinaCollege of Integrated Circuits,Zhejiang University,Hangzhou 311200,ChinaCollege of Integrated Circuits,Zhejiang University,Hangzhou 311200,ChinaCollege of Integrated Circuits,Zhejiang University,Hangzhou 311200,China||ZJU-Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou 311200,China||Zhejiang Technology Innovation Center of CMOS IC Manufacturing Process and Design,Hangzhou 311200,China
lateral diffused metal-oxide-semiconductor(LDMOS)specific on-resistance(Ron,sp)breakdown voltage(BV)split gatecontact field plate(CFP)
lateral diffused metal-oxide-semiconductor(LDMOS)specific on-resistance(Ron,sp)breakdown voltage(BV)split gatecontact field plate(CFP)
《半导体学报（英文版）》 2026 (5)
36-42,7
This work was supported by the Zhejiang Province Key Research and Development Programs under Grant 2024C01002.
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