Room-temperature electrically injected GaN-based vertical-cavity surface-emitting laser with conductive nanoporous distributed Bragg reflectorOA
Room-temperature electrically injected GaN-based vertical-cavity surface-emitting laser with conductive nanoporous distributed Bragg reflector
Chuanjie Li;Hui Yang;Meixin Feng;Jianping Liu;Aiqin Tian;Xuan Li;Wei Zhou;Rui Xi;Shuming Zhang;Qian Sun
Key Laboratory of Semiconductor Display Materials and Chips,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,China||School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,ChinaKey Laboratory of Semiconductor Display Materials and Chips,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,China||School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China||School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,ChinaKey Laboratory of Semiconductor Display Materials and Chips,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,China||School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,ChinaKey Laboratory of Semiconductor Display Materials and Chips,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,China||School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,ChinaKey Laboratory of Semiconductor Display Materials and Chips,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,China||School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,ChinaKey Laboratory of Semiconductor Display Materials and Chips,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,ChinaKey Laboratory of Semiconductor Display Materials and Chips,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,ChinaKey Laboratory of Semiconductor Display Materials and Chips,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,ChinaKey Laboratory of Semiconductor Display Materials and Chips,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,China||School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,ChinaKey Laboratory of Semiconductor Display Materials and Chips,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,China||School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China
《半导体学报（英文版）》 2026 (5)
25-28,4
This work was funded by National Key R&D Program of China(Grant Nos.2024YFB3612200 and 2024YFB3612201)Nat-ural Science Foundation of China(Grant Nos.62404241,62304242,U24A20300,U25A20490,62174174,62274177,62275263,62325406,62374172,62304240,and 62504242)Youth Innovation Promotion Association of CAS(Grant Nos.2022323,and 2022324)Key R&D Program of Jiangsu Province(Grant Nos.BG2024019 and BE2023018-2)Basic Research Program of Jiangsu(Grant Nos.BK20240126,BK20250500,and BK20250503)Suzhou Science and Technol-ogy Program(Grant Nos.SYC2022089,ZXL2024379,ZXL2024376,ZXL2025308,SSD2024005,and SYG2025119).General Program of the China Postdoctoral Science Founda-tion(Grant Nos.2025M770832).We are thankful for the techni-cal support from Nano Fabrication Facility,Platform for Charac-terization and Test,and Nano-X of SINANO,CAS.
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