Cu2ZnSn(S,Se)4光电突触忆阻器及其神经形态应用研究简述OA

Memristors,as key fundamental devices for constructing next-generation"in-memory computing"and brain-inspired neuromorphic computing,are regarded as important candidates for breaking through the bottlenecks of the"von Neumann architecture",due to their advantages in high-density storage,tunable conductivity,and potential energy efficiency.The Cu2ZnSn(S,Se)4(CZTSSe)resistive material has excellent photoelectric response,abundant elemental reserves,low cost and is environmentally friendly,it has become the preferred material for photoelectric synaptic memristor.This article briefly reviews the research progress in optimizing the resistive performance,simulating the synaptic behavior,and the neuromorphic applications of the CZTSSe photoelectronic synaptic memristor via component ratio,electrode matching,and thickness regulation,which will provied an important reference for the design,optimization and application of high-performance CZTSSe-based neuromorphic devices.