Corundum(InxGa1-x)2O3 alloys:First-principles study,epitaxial growth and thermal annealingOA
Corundum(InxGa1-x)2O3 alloys:First-principles study,epitaxial growth and thermal annealing
Do Dang Minh;Nguyen Le Manh An;Kyoung-Ho Kim;Si-Young Bae;Minh-Tan Ha
School of Materials Science and Engineering,Hanoi University of Science and Technology,Ha Noi 10000,VietnamSchool of Materials Science and Engineering,Hanoi University of Science and Technology,Ha Noi 10000,VietnamSystem Technology Research Division,Korea Research Institute for Defense Technology,Jinju 52852,Republic of KoreaDepartment of Semiconductor Engineering,Pukyong National University,Busan 49315,Republic of KoreaSchool of Materials Science and Engineering,Hanoi University of Science and Technology,Ha Noi 10000,Vietnam
(InxGa1-x)2O3 alloysFirst-principles calculationsMist-CVDMiscibility gapBandgap engineering
(InxGa1-x)2O3 alloysFirst-principles calculationsMist-CVDMiscibility gapBandgap engineering
《化学物理材料（英文）》 2026 (2)
232-242,11
This research was funded by the Ministry of Education and Training(MOET)of Vietnam under grant number B2024-BKA-22 and the Na-tional Research Foundation of Korea(NRF)and the Commercialization Promotion Agency for R&D Outcomes(COMPA)grant funded by the Korea Government(Ministry of Science and ICT)(RS-2025-02222547).
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