Numerical simulation of plasma etching process with AAO mask based on PIC/MCC modelOA
Numerical simulation of plasma etching process with AAO mask based on PIC/MCC model
Zeping Li;Ran An;Mingyan Yang;Dongjing Li;Hao Wu
School of Electronic and Information Engineering,Hubei University of Science and Technology,Xianning 437100,ChinaSchool of Electronic and Information Engineering,Hubei University of Science and Technology,Xianning 437100,ChinaDepartment of Rehabilitation,Xianning Hospital of Traditional Chinese Medicine,Xianning 437100,ChinaSchool of Electronic and Information Engineering,Hubei University of Science and Technology,Xianning 437100,ChinaSchool of Electronic and Information Engineering,Hubei University of Science and Technology,Xianning 437100,China
Plasma etchingAAOPIC/MCCCharge densityParticle trajectoryNanostructured silicon
Plasma etchingAAOPIC/MCCCharge densityParticle trajectoryNanostructured silicon
《化学物理材料（英文）》 2026 (2)
170-174,5
The authors acknowledge the support from National Natural Sci-ence Foundation of China(12505231)and National Scientific Research Project Cultivation Program of Hubei University of Science and Tech-nology(2023-25GP01).
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