Back-end-of-line-compatible low-voltage operation in Hf0.5Zr0.5O2 ferroelectric film enabled by in-situ lanthanum dopingOA
Back-end-of-line-compatible low-voltage operation in Hf0.5Zr0.5O2 ferroelectric film enabled by in-situ lanthanum doping
Yinchi Liu;Kangli Xu;Shuqi Tang;Handong Zhu;Lin Chen;Shiyou Chen;Wenjun Liu;Peng Zhou
College of Integrated Circuits and Micro-Nano Electronics,Fudan University,Shanghai 200433,China||Shaoxin Laboratory,Shaoxing 312000,ChinaCollege of Integrated Circuits and Micro-Nano Electronics,Fudan University,Shanghai 200433,ChinaCollege of Integrated Circuits and Micro-Nano Electronics,Fudan University,Shanghai 200433,ChinaCollege of Integrated Circuits and Micro-Nano Electronics,Fudan University,Shanghai 200433,ChinaCollege of Integrated Circuits and Micro-Nano Electronics,Fudan University,Shanghai 200433,ChinaCollege of Integrated Circuits and Micro-Nano Electronics,Fudan University,Shanghai 200433,ChinaCollege of Integrated Circuits and Micro-Nano Electronics,Fudan University,Shanghai 200433,China||Shaoxin Laboratory,Shaoxing 312000,ChinaCollege of Integrated Circuits and Micro-Nano Electronics,Fudan University,Shanghai 200433,China||Shaoxin Laboratory,Shaoxing 312000,China
lanthanum dopingferroelectricityback-end-of-linelow-voltage operation
lanthanum dopingferroelectricityback-end-of-linelow-voltage operation
《国家科学评论（英文版）》 2026 (6)
256-264,9
This work was supported by the Shanghai Municipal Science and Technology Commission(24DP1500105 and 23511102300)and the National Key Research and Development Program of China(2021YFB3202500 and 2021YFA1202600).
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