首页|期刊导航|国家科学评论(英文版)|Giant enhancement of optoelectronic properties in compressed boron-rich semiconductors

Giant enhancement of optoelectronic properties in compressed boron-rich semiconductorsOA

Giant enhancement of optoelectronic properties in compressed boron-rich semiconductors

Ming-Xing Huang;Xiao-Ji Weng;Feng Ke;Xiang-Feng Zhou;Yongjun Tian;Kun Ye;Jingyu Hou;Yufei Gao;Guochun Yang;Lin Wang;Wentao Hu;Bo Xu;Zhongyuan Liu

Center for High Pressure Science,State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 066004,China||Hebei Key Laboratory of Microstructural Material Physics,School of Science,Yanshan University,Qinhuangdao 066004,ChinaCenter for High Pressure Science,State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 066004,ChinaCenter for High Pressure Science,State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 066004,ChinaCenter for High Pressure Science,State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 066004,China||Hebei Key Laboratory of Microstructural Material Physics,School of Science,Yanshan University,Qinhuangdao 066004,ChinaCenter for High Pressure Science,State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 066004,ChinaSchool of Electronics and Information Engineering,Institute of Quantum Materials and Devices,State Key Laboratory of Separation Membrane and Membrane Processes,Tiangong University,Tianjin 300387,ChinaCenter for High Pressure Science,State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 066004,ChinaCenter for High Pressure Science,State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 066004,ChinaHebei Key Laboratory of Microstructural Material Physics,School of Science,Yanshan University,Qinhuangdao 066004,ChinaCenter for High Pressure Science,State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 066004,ChinaCenter for High Pressure Science,State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 066004,ChinaCenter for High Pressure Science,State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 066004,ChinaCenter for High Pressure Science,State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 066004,China

boridesoptoelectronichigh pressureanti-Wilson

boridesoptoelectronichigh pressureanti-Wilson

《国家科学评论(英文版)》 2026 (6)

204-210,7

This work was supported by the National Natural Sci-ence Foundation of China(52025026,52288102,52090020,52372157,52571229,52202155 and 52403391).Part of the work was supported by the Hebei Natural Science Foundation(E2025203149 and A2025203019).

10.1093/nsr/nwag051

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