Large-scale gate-all-around MoS2 transistor array through lossless monolithic 3D integrationOA
Large-scale gate-all-around MoS2 transistor array through lossless monolithic 3D integration
Chao Chen;Zhangyi Chen;Zheng Zhang;Xiankun Zhang;Yue Zhang;Kuanglei Chen;Hang Zhao;Shucao Lu;Jinsen Shang;He Jiang;Li Gao;Xiaoyu He;Shihua Jiang
Academy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,ChinaAcademy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,ChinaAcademy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,ChinaAcademy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,ChinaAcademy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,ChinaAcademy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,ChinaAcademy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,ChinaAcademy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,ChinaAcademy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,ChinaAcademy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,ChinaAcademy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,ChinaAcademy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,ChinaAcademy for Advanced Interdisciplinary Science and Technology,Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,State Key Laboratory for Advanced Metals and Materials,University of Science and Technology Beijing,Beijing 100083,China||School of Materials Science and Engineering,Beijing Key Laboratory for Advanced Energy Materials and Technologies,University of Science and Technology Beijing,Beijing 100083,China
lossless monolithic 3D integration2D MoS2large scaleultrahigh current densitygate-all-aroundseed layer
lossless monolithic 3D integration2D MoS2large scaleultrahigh current densitygate-all-aroundseed layer
《国家科学评论（英文版）》 2026 (6)
193-203,11
This work was supported by the National Natural Science Foundation of China(52350301,52250398,92463308,62322402,52188101,52225206,92163205,62204012,52303362,62304019,52302162,52402169 and 62504018),the National Key Research and Development Program of China(2022YFA1203803 and 2023YFF1500401),the Beijing Nova Program(20220484145 and 20230484478),the Young Elite Scientists sponsorship program by the Chinese Association for Science and Technology(2022QNRC001),the Fundamental Research Funds for the Central Universities(FRF-TP-22-004C2,FRF-06500207 and FRF-IDRY-23-038),the State Key Lab for Advanced Metals and Materials(2023-Z05),the Postdoctoral Fellowship Program of the Chinese Postdoctoral Science Founda-tion(GZC20230233)and special support from the Postdoctoral Science Foundation(2023TQ0007 and BX20250290).
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