镍锰钒氧化物薄膜阻温传感器的构建及性能OA

NiMn2-xVxO4 films were prepared by DC reactive sputtering at different sputtering powers and a film temperature resistance sensor was successfully constructed.The surface morphology and microstructure of the films were investigated using SEM,AFM and XRD,and the distribution of cations and oxygen vacancies within the films was studied using XPS.The results showed that the growth rate of the films became faster with the increase of sputtering power,and the films with different sputtering powers showed better densification.The film roughness showed a tendency of first decreasing and then increasing.The films are composed of NiMn2O4 spinel and intermetallic compounds of V.The lattice constants are increasing with the increase of sputtering power,and the distribution of cations and the change of the oxygen vacancies are obvious.Compared with sputtering powers of 90,100 and 120 W,the films formed by sputtering at 110 W have the least content of Mn2+(55.25％),as well as the most content of Mn3+(7.18％)and Mn4+(37.57％),and the vanadium ions are composed of V3+and V4+.The temperature resistance characteristics of thin film temperature resistance sensors constructed with different powers were tested in the temperature range of 293-363 K.The results showed that the room temperature resistance of the thin-film sensors decreases significantly from 212.0 kΩ to 0.7 kΩ with increasing sputtering power.The thin film sensors have the maximum thermal constant of 6 505 K at a sputtering power of 110 W.