无铅双钙钛矿忆阻器的制备及其神经形态计算OA

Lead-based perovskites suffer from inherent toxicity and instability.To address these issues,this work focused on the environmentally friendly lead-free double perovskite Cs2 AgBiBr6 and conducted research on its resistive switching characteristics and neuromorphic applications.A smooth and dense Cs2AgBiBr6 film was deposited on an FTO substrate via spin-coating using methyl acetate as an anti-solvent.The film exhibits low surface roughness,with a root mean square(RMS)roughness of 6.96 nm and an average roughness of 5.65 nm.Using this film as the functional layer,an FTO/Cs2 AgBiBr6/Ag memristor was fabricated.The device shows stable bipolar resistive switching with a SET voltage of+1.5 V,a RESET voltage of-1.0 V,an ON/OFF ratio of 42,and an endurance of over 100 cycles.Furthermore,it successfully emulates long-term potentiation(LTP)and long-term depression(LTD).A three-layer neural network based on this memristor achieves a recognition accuracy of 95％ on the MNIST handwritten digit dataset.This work highlights the potential of Cs2AgBiBr6-based memristors for low-power and high-efficiency neuromorphic computing.