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一种Brokaw型高电源抑制低温漂基准电压源OA

A Brokaw-type bandgap voltage reference with high RSRR and low drift

中文摘要英文摘要

针对传统Brokaw型带隙基准电路在宽温域环境下温度漂移较大以及无运放架构固有的电源抑制性能受限等问题,基于东部高科0.18μm BCD工艺,提出了一种高电源抑制低温漂的带隙基准电路.电路采用分段温度补偿技术,在低温段和高温段分别引入补偿电流,大幅降低了温度系数.设计了一种BJT自钳位结构,摒弃了传统的运算放大器钳位方案,进而有效降低电路复杂度与功耗,并引入新型负反馈环路以补偿无运放架构对电源抑制性能的影响.Cadence仿真结果表明,该电路在-55~125 ℃的宽温度范围内,电路输出基准电压的温度漂移系数(TC)为1.5×10-6 ℃-1,电源抑制比(PSRR)为81.4dB@DC.该设计成功实现了在无运放架构下的高精度与高电源抑制能力,适用于高性能模拟集成电路系统.

To address the issues of large temperature drift in traditional Brokaw bandgap reference(BGR)circuits over wide temperature ranges and the inherent limitations of power supply rejection(PSR)performance in op-amp-less architectures,a high-PSRR and low-drift BGR circuit was proposed based on the Dongbu HiTek 0.18 μm BCD process.Piecewise temperature compensation technology was utilized,in which compensation currents were introduced in the low-temperature and high-temperature segments,respectively,to significantly reduce the temperature coefficient.A BJT self-clamping structure was designed to replace the traditional operational amplifier clamping scheme,thereby effectively reducing circuit complexity and power consumption.In addition,a novel negative feedback loop was introduced to compensate for the impact of the op-amp-less architecture on PSR performance.Cadence simulation results show that over a wide temperature range of-55 ℃ to 125 ℃,the temperature coefficient(TC)of the output reference voltage is 1.5×10-6 ℃-1 and the power supply rejection ratio(PSRR)is 81.4 dB at DC.This design achieves high precision and superior power supply rejection capability within an op-amp-less architecture,making it suitable for high-performance analog integrated circuit systems.

张涛;秦权;刘劲

武汉科技大学 信息科学与工程学院,湖北武汉 430081武汉科技大学 信息科学与工程学院,湖北武汉 430081武汉科技大学 信息科学与工程学院,湖北武汉 430081

信息技术与安全科学

基准电压高电源抑制低温漂

reference voltagehigh power supply rejectionlow temperature drift

《电子元件与材料》 2026 (4)

424-430,7

国家自然科学基金(61873196)

10.14106/j.cnki.1001-2028.2026.1450

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