一种无耗尽型场效应管的低功耗电压基准电路OA

Aiming at the problems of high cost and high power consumption in traditional reference voltage circuits,a low-cost,low-power reference voltage circuit was designed.This circuit employed MOS transistors operating in the subthreshold region,utilized the negative temperature coefficient characteristic of their threshold voltage(VTH),and combined the positive temperature coefficient voltage generated by the gate-coupled MOSFET unit biased in the subthreshold region to achieve a lower temperature coefficient through the superposition of positive and negative temperature coefficient voltages.Based on the 0.18 μm BCD process,simulations were conducted in the Cadence Spectre environment.Simulation results show that over a temperature range of-40 ℃ to 125 ℃ with a supply voltage of 3.3 V,the circuit maintains a stable output voltage of about 993 mV with a fluctuation of only 2.18 mV;the temperature coefficient reaches 13.2× 10-6/℃,and the power supply rejection ratio(PSRR)is-48.7 dB;the quiescent current is as low as 93.28 nA,and the power consumption is only 0.308μW.This circuit has no operational amplifier structure and does not adopt depletion-mode field-effect transistors,realizing a low-cost,low-power reference voltage source with nA-level quiescent current.It has advantages in integrated circuit applications sensitive to cost and power consumption.