激光刻蚀-等离子活化对PI/Cu界面结合强度增强机理研究OA
Study on the enhancement mechanism of laser etching-plasma activation on the adhesion strength of PI/Cu interfaces
针对刚性聚酰亚胺(PI)表面化学惰性强、与铜(Cu)层结合强度低的问题,提出了一种激光刻蚀与等离子活化协同的改性技术以提升PI/Cu界面结合强度与一致性.设计了正交实验优化激光刻蚀参数(扫描间距、扫描速度、重复频率、激光功率),并结合O2/N2等离子活化处理制备样件,开展系统表征.结果表明,采用激光扫描间距10μm、速度100mm/s、频率50 kHz、功率3 W刻蚀并辅以60 min等离子活化,PI/Cu界面结合强度均值可达31.62 MPa,标准差6.47 MPa.机理分析表明,激光刻蚀构建规则沟槽以增加有效结合面积,等离子活化去除残留物、引入活性基团并重构纳米微结构.二者协同形成物理机械互锁与化学键合双重强化机制,使结合强度远超GJB 362C规范要求,为高性能电子封装用刚性PI表面金属化提供了一种可行方案.
To address the strong chemical inertness of rigid polyimide(PI)and its low adhesion strength with copper(Cu)layers,a synergistic modification method combining laser etching and plasma activation was proposed to enhance the interfacial adhesion strength and consistency of PI/Cu.Laser etching parameters,including scan spacing,scanning speed,pulse repetition frequency,and laser power,were optimized using an orthogonal experimental design,followed by O2/N2 plasma activation for sample preparation and systematic characterization.The results show that under laser etching conditions of a scan spacing of 10 μm,a scanning speed of 100 mm/s,a repetition frequency of 50 kHz,and a power of 3 W,combined with 60 min plasma activation,the PI/Cu interfacial adhesion strength reaches the optimum,with an average value of 31.62 MPa and a standard deviation of 6.47 MPa.Mechanism analysis indicates that laser etching constructs regular groove structures to increase the effective interfacial area,while plasma activation removes residues,introduces active functional groups,and reconstructs nanoscale surface features.The synergistic effect of the two processes establishes a dual enhancement mechanism of mechanical interlocking and chemical bonding,resulting in an adhesion strength far exceeding the requirement of the GJB 362C standard.This study provides a feasible approach for the surface metallization of rigid PI.
杨博;方杰;黎康杰;彭颐豫;潘玉华
中国电子科技集团公司第二十九研究所,四川成都 610036中国电子科技集团公司第二十九研究所,四川成都 610036中国电子科技集团公司第二十九研究所,四川成都 610036中国电子科技集团公司第二十九研究所,四川成都 610036中国电子科技集团公司第二十九研究所,四川成都 610036
信息技术与安全科学
刚性聚酰亚胺激光刻蚀等离子活化PI/Cu界面结合强度表面改性
rigid PIlaser etchingplasma activationPI/Cuadhesion strength of interfacesurface modification
《电子元件与材料》 2026 (4)
387-397,11
四川省"天府青城计划天府工匠"项目
评论