首页|期刊导航|真空电子技术|一种基于同轴结构的低功率微波大气压等离子体射流装置

一种基于同轴结构的低功率微波大气压等离子体射流装置OA

A Low-Power Microwave Atmospheric Pressure Plasma Jet Device Based on Coaxial Structure

中文摘要英文摘要

同轴式微波等离子体射流装置结构紧凑、操作便捷,其在大气压环境下产生的等离子体因高电离度与高粒子活性等优势具备广泛应用前景.为降低等离子体激发功率阈值并优化装置的可调节性,基于外导体延伸的同轴结构,设计了一款工作于 2.45 GHz 的低功率微波大气压等离子体射流装置.研究分析了外导体延伸对等离子体激发功率阈值的影响,并探究了不同放电参数下等离子体射流形貌的变化规律.仿真结果表明,相较于内外导体齐平的同轴结构,外导体延伸可使内导体尖端处最大电场强度提升至少 50%,从而降低等离子体激发功率阈值.实验结果显示,外导体延伸长度 l=8 mm 时,氩气等离子体的最小激发功率可低至 5 W;l=15 mm 时,仅需 170 W 输入功率即可激发大气压空气等离子体,两者性能均优于内外导体齐平的同轴结构.

The coaxial microwave plasma jet device features compact structure and convenient operation.The plasma generated in the atmospheric pressure environment has broad application prospects due to its advantages of high ionization degree and high particle activity.To reduce the excitation power threshold and enhance the regula-tion flexibility of the device,a low-power microwave atmospheric pressure plasma jet device operating at 2.45 GHz is designed based on the coaxial structure with extended outer conductor.The influence of outer conductor exten-sion on the excitation power threshold of plasma is analyzed,and the variation law of plasma morphology under different discharge parameters is explored.Simulation results show that the maximum electric field intensity at the tip of the inner conductor is increased by at least 50%after outer conductor extension compared with the structure where inner and outer conductors are flush,thereby reducing the plasma excitation power threshold.Experimental results indicate that when the extension length of the outer conductor l=8 mm,the minimum excitation power of argon plasma can be as low as 5 W.When l=15 mm,only 170 W input power is required to excite atmospheric pressure air plasma.The performance of the device is superior to those of the coaxial structure with flush inner and outer conductors.

彭婕;王军;吴丽

四川大学 电子信息学院,四川 成都 610065四川大学 电子信息学院,四川 成都 610065四川大学 电子信息学院,四川 成都 610065

信息技术与安全科学

微波等离子体射流同轴结构外导体延伸低功率激发

Microwave plasma jetCoaxial structureOuter conductor extensionLow-power excitation

《真空电子技术》 2026 (2)

15-19,5

10.16540/j.cnki.cn11-2485/tn.2026.02.03

评论