n型HJT太阳电池中氢化纳米晶硅层的研究进展OA

After years of development,as of April 2025,the photoelectric conversion efficiency of HJT solar cells has rapidly increased to 27.81%,yet many challenges remain.This paper first outlines the structure and preparation process of standard HJT solar cells.Then,the current research status of the deposition process of hydrogenated nanocrystalline silicon layer is explored in depth,and the effects of different deposition conditions on the crystal quality and carrier transport efficiency of hydrogenated nanocrystalline silicon layer are studied.The application progress of hydrogenated nanocrystalline silicon layer in HJT solar cells is introduced in detail.Finally,the future research directions of HJT solar cells are discussed.The research results show that the nc-/μc-Si:H layer has unique advantages as a carrier transport layer in HJT solar cells.Compared with traditional a-Si:H layers,nc-Si:H layer,μc-Si:H layer,nc-SiOx:H layer,μc-SiOx:H layer exhibit superior surface passivation performance,lower photo parasitic absorption,and higher conductivity.These characteristics collectively promote a significant improvement in the photoelectric conversion efficiency of HJT solar cells.For nc-Si:H layer,compared with p-type doping,n-type doping can improve doping efficiency while maintaining higher crystallinity.Reducing the production cost of HJT solar cells is one of the future research directions to enhance the market competitiveness of such solar cells.Research can be conducted from the perspectives of silver coated copper low-temperature paste,copper electroplating technology,low indium and indium free TCO layers,etc.Overall,HJT solar cells have broad development prospects in the future due to their unique structure and high photoelectric conversion efficiency.