Bi掺杂调控Ge0.8Mn0.1Pb0.1Te合金热电性能的研究OA
Thermoelectric properties of Bi-doped Ge0.8Mn0.1Pb0.1Te alloys
GeTe合金作为中温区极具潜力的热电材料,因其优异的热电性能而备受关注.本研究采用真空熔炼结合热压烧结工艺,成功制备出Ge0.8-xMn0.1Pb0.1BixTe系列合金.结果表明,Bi元素的引入显著降低了合金的载流子浓度,进而增加了塞贝克系数.随着Bi掺杂浓度的增加,合金的晶体结构由菱面体相逐渐转变为立方相.同时,Bi的引入加剧了GeTe合金内部的晶格畸变,增强了声子散射,降低了晶格热导率,且由于电阻率的升高,电子热导率显著降低.在773 K时,Ge0.78Mn0.1Pb0.1Bi0.02Te合金的热导率降低至1.34 W/(m·K).最终,该合金在中低温下的热电优值得到提高,同时在高温区保持了较高的热电优值,从而获得了高达0.80的平均热电优值.
GeTe-based alloys have attracted considerable attention as promising mid-temperature thermoelectric materials owing to their excellent performance.In this study,a series of Ge0.8-xMn0.1Pb0.1BixTe alloys were synthesized by vacuum melting followed by hot-press sintering.The results demonstrate that Bi incorporation significantly enhances the Seebeck coefficient.With increasing Bi content,the crystal structure gradually evolves from a rhombohedral to a cubic phase.Simultaneously,Bi-induced lattice distortion intensifies phonon scattering,leading to a marked reduction in lattice thermal conductivity,while the electronic thermal conductivity also decreases as a result of reduced electrical conductivity.At 773 K,the total thermal conductivity of Ge0.78Mn0.1Pb0.1Bi0.02Te reaches a low value of 1.34 W/(m·K).Consequently,the alloys exhibit enhanced thermoelectric figure of merit(ZT)values in the low-to-mid temperature range while maintaining high ZTat elevated temperatures,yielding a high average thermoelectric figure of merit(ZT,avg)of 0.80.
孙兵;王麒栋;张军祥;孟振振;陈婷婷
潍坊学院物理与电子信息学院山东省氮化镓材料与应用重点实验室,山东潍坊 261061潍坊学院物理与电子信息学院山东省氮化镓材料与应用重点实验室,山东潍坊 261061||济南市X射线光学重点实验室,山东济南 250002潍坊学院物理与电子信息学院山东省氮化镓材料与应用重点实验室,山东潍坊 261061潍坊学院物理与电子信息学院山东省氮化镓材料与应用重点实验室,山东潍坊 261061潍坊学院物理与电子信息学院山东省氮化镓材料与应用重点实验室,山东潍坊 261061
通用工业技术
热电材料元素掺杂GeTe热导率热电优值
thermoelectric materialsdopingGeTethermal conductivitythermoelectric figure of merit
《山东科学》 2026 (2)
20-26,7
国家自然科学基金(12204355,52272210)山东省自然科学基金(ZR2023QE282,ZR2022QA018,ZR2022QA009)山东省氮化镓材料与应用重点实验室济南市X射线光学重点实验室开放课题(2024JKLXOOP003)
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