合金相变材料封装结构对电子芯片散热器性能的影响OA
Influence of alloy phase change material package structure on the performance of electronic chip heat sinks
本研究探讨了铟铋合金相变材料(PCM)散热器在电子芯片瞬时高热功率条件下的散热性能.设计了三种不同PCM填充比(20%、30%、50%)的封装结构,并在10秒加热周期内进行实验测试.实验结果表明,散热效率与PCM填充比之间并不呈线性关系,PCM的热交换面积对热吸收效率有显著影响.基于实验结果,建立了仿真模型,分析了热功率、热阻和对流换热系数等关键参数对散热性能的影响.研究结果为优化基于PCM的电子设备散热方案,特别是在短时高发热情况下提供了有价值的参考.
This study investigates the cooling performance of In-Bi alloy phase change material(PCM)heat sinks for electronic chips with transient high heat generation.Three packaging configurations with varying PCM filling ratios(20%,30%and 50%)of In-Bi alloy PCM were designed and tested over 10-second heating cycles.Experimental results demonstrate that the cooling efficiency does not correlate linearly with PCM filling ratio.Instead,the PCM heat exchange area significantly impacts heat absorption efficiency.A simulation model was developed to analyze the influence of critical parameters,including heat power,thermal resistance and convective heat transfer coefficients,on cooling performance.The results provide valuable insights for optimizing PCM-based cooling solutions in electronic devices,especially under short-term high power conditions.
陆冰冰;卜凯阳;李楚杉;王伟烈
浙江大学伊利诺伊厄巴纳香槟校区联合学院,浙江 嘉兴 314499浙江大学伊利诺伊厄巴纳香槟校区联合学院,浙江 嘉兴 314499浙江大学伊利诺伊厄巴纳香槟校区联合学院,浙江 嘉兴 314499浙江大学伊利诺伊厄巴纳香槟校区联合学院,浙江 嘉兴 314499
信息技术与安全科学
相变材料铟铋合金电子芯片散热瞬时高热功率
PCMIn-Bi alloyelectronic coolingtransient high power overload
《能源工程》 2026 (2)
11-18,8
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