基于Sb2S3单晶/n-GaAs异质结的宽带自驱动光电探测器OA

Broadband photodetectors are of significant application value in fields such as imaging,communication,and spectral analysis.In this work,high-crystalline-quality micrometer-sized Sb2S3 single crystals were prepared by chemical vapor deposition,exhibiting a low defect density of only 4.8×1010 cm-3.An Sb2S3/GaAs heterojunction mod-el was established using SCAPS-1D software,and simulations indicated that the low defect density in Sb2S3 contrib-utes to enhancing the output current and spectral responsivity of the heterojunction,particularly in the ultraviolet and visible wavelength ranges.Based on this,a self-powered heterojunction photodetector based on Sb2S3 single crystal/n-GaAs was fabricated.The device demonstrates excellent photoelectrical response across a broad spectral range from 300 nm to 1 000 nm.Under an optical power density of 0.4 mW·cm-2,it achieves a peak responsivity of over 200 mA·W-1 at 830 nm,a specific detectivity exceeding 3×1010 Jones,a-3 dB bandwidth higher than 1 kHz,and rise/fall response times of 134 µs and 223 µs,respectively.This study provides a feasible approach for the design and fabrication of high-performance,broadband,low-power photodetectors,showing promising potential for applications in integrated optoelectronics and sensing systems.