高亮度边发射半导体激光器及其脉冲驱动研究进展OA

High-brightness edge-emitting semiconductor lasers,with advantages such as high electro-optical con-version efficiency,high beam quality,and high peak power,have been widely applied in various fields,including material processing,medical treatment,and light detection and ranging(LiDAR).However,it remains challenging to achieve edge-emitting lasers with both high output power and high beam quality,and this challenge has become a research focus in the field of high-brightness edge-emitting semiconductor lasers.First,this paper systematically summarizes the research progress of high-power and high-beam-quality edge-emitting semiconductor lasers both do-mestically and internationally in recent years,outlines the methods for lateral mode control and vertical far-field di-vergence angle optimization of such lasers.Second,it presents the pulsed driving technology,which helps alleviate thermal accumulation in the active region,achieve high peak power output,and thereby enable high-brightness oper-ation of the device.The brightness of the multi-active-region tunnel junction lasers can reach 300 MW·cm-2·sr-1 at a peak power of 100 W.The High-brightness vertical broad-area edge-emitting(HiBBEE)laser can reduce the verti-cal far-field divergence angle,further improving the coupling efficiency of the optical system and lowering the cost of collimating and focusing lenses.Finally,combined with the current development status and future requirements of driving technologies and high-brightness lasers,this paper provides an outlook on the realization of high-performance pulsed-driven high-brightness semiconductor lasers.