应变Si MOS器件单粒子辐照效应OA

With the rapid development of aerospace industry,all kinds of radiation particles in the radiation en-vironment have become one of the key problems that restrict the reliability of electronic components in spacecraft.The single event effect of devices is becoming more and more serious.In view of the degradation of strained MOSFET(Metal Oxide Semiconductor Field Effect Transistor)devices caused by single particle effect in irradiation environ-ment,Sentaurus TCAD software is used to simulate the impact process of 50 nm strain silicon MOS device by heavy ions to verify the existence of funnel electric field and the influence of bipolar amplification effect on the drain transi-ent current,and to study the single particle irradiation characteristics of MOS device by stress,different injection po-sitions and different bias parameters.The results show that the peak value of the transient current increases with the increase of drain bias and LET(Linear Energy Transfer),and decreases with the increase of substrate doping concen-tration in the sensitive region of the device.