1200 V 4H-SiC Trench Gate Lateral MOSFET with Carrier Movement Control TechnologyOA
1200 V 4H-SiC Trench Gate Lateral MOSFET with Carrier Movement Control Technology
Jie Ma;Weifeng Sun;Mengyao Zhao;Tianchun Nie;Yong Gu;Qiwei Peng;Runhua Huang;Song Bai;Long Zhang;Siyang Liu
National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaNational ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaNational ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaNational ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaNational ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaNational ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaNanjing Electronic Device Institute,Nanjing 100048,ChinaNanjing Electronic Device Institute,Nanjing 100048,ChinaNational ASIC System Engineering Research Center,Southeast University,Nanjing 210096,ChinaNational ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China
Silicon carbideLateral diffused metal-oxide-semiconductor field effect transistorCarrier move-ment controlElectron mobilityCurrent pathSpecific on-state resistanceBreakdown voltage
Silicon carbideLateral diffused metal-oxide-semiconductor field effect transistorCarrier move-ment controlElectron mobilityCurrent pathSpecific on-state resistanceBreakdown voltage
《电子学报（英文）》 2026 (1)
114-119,6
This work was supported by the National Key R&D Program of China(Grant No.2023YFB4403700),the Natural Science Foundation of Jiangsu Province(Grant Nos.BK20232006 and BK20241292),the Distinguished Young Scientists Foundation of Jiangsu Province(Grant No.BK20230025),the Key Research Program of Jiangsu Province(Grant No.BE2022058-3),and the China Postdoctoral Science Foundation(Grant Nos.2023TQ0055 and 2024M750419).
评论