Single Event Effect of a 16-Gbps Transmitter in Bulk Planar and Bulk FinFET CMOS TechnologiesOA
Single Event Effect of a 16-Gbps Transmitter in Bulk Planar and Bulk FinFET CMOS Technologies
Yi Wen;Jianjun Chen;Bin Liang;Yaqing Chi;Hanhan Sun;Jun Huang;Hengzhu Liu
College of Computer Science and Technology,National University of Defense Technology,Changsha 410073,China||Key Laboratory of Advanced Microprocessor Chips and Systems,National University of Defense Technology,Changsha 410073,ChinaCollege of Computer Science and Technology,National University of Defense Technology,Changsha 410073,China||Key Laboratory of Advanced Microprocessor Chips and Systems,National University of Defense Technology,Changsha 410073,ChinaCollege of Computer Science and Technology,National University of Defense Technology,Changsha 410073,China||Key Laboratory of Advanced Microprocessor Chips and Systems,National University of Defense Technology,Changsha 410073,ChinaCollege of Computer Science and Technology,National University of Defense Technology,Changsha 410073,China||Key Laboratory of Advanced Microprocessor Chips and Systems,National University of Defense Technology,Changsha 410073,ChinaCollege of Computer Science and Technology,National University of Defense Technology,Changsha 410073,China||Key Laboratory of Advanced Microprocessor Chips and Systems,National University of Defense Technology,Changsha 410073,ChinaCollege of Computer Science and Technology,National University of Defense Technology,Changsha 410073,China||Key Laboratory of Advanced Microprocessor Chips and Systems,National University of Defense Technology,Changsha 410073,ChinaCollege of Computer Science and Technology,National University of Defense Technology,Changsha 410073,China||Key Laboratory of Advanced Microprocessor Chips and Systems,National University of Defense Technology,Changsha 410073,China
Single event effectHeavy ion experimentPulsed laser experimentBulk planar CMOS tech-nologyBulk fin field-effect transistor CMOS technology
Single event effectHeavy ion experimentPulsed laser experimentBulk planar CMOS tech-nologyBulk fin field-effect transistor CMOS technology
《电子学报（英文）》 2026 (1)
57-65,9
This work was supported by the National Natural Sci-ence Foundation of China(Grant No.62174180).
评论