增材制造碳化硅微观结构的离子辐照行为OA

Additive manufacturing combining binder jetting(BJ)with chemical vapor infiltration(CVI)is capable of produc-ing high-purity,large-sized,and geometrically complex silicon carbide(SiC),making it a promising candidate for resolving the fabrication challenges of SiC as a nuclear-grade material.However,the microstructural evolution under ion irradiation of SiC produced by this approach,particularly the CVI-SiC,remains insufficiently studied,which limits its development.In this study,SiC powder with an average particle size of 20 μm was used to fabricate additively manufactured SiC(AM-SiC)specimens with a diameter of 20 mm and a thickness of 1.5 mm via the BJ+CVI,which achieved an average density of 2.70 g/cm³.AM-SiC specimens were irradiated with 3 MeV Si²⁺ ions at 500℃and 800℃to 10 dpa.The microstructure of the CVI-SiC before and after irradiation was characterized using transmission electron microscopy(TEM).No significant irradiation-induced voids,dislocation loops,or amorphization were observed in the CVI-SiC after ion irradiation,demon-strating its excellent irradiation stability.