Low-voltage and high-reliability resistive switching in Si3N4:Si-NCs memristor structuresOA
Low-voltage and high-reliability resistive switching in Si3N4:Si-NCs memristor structures
Arely Vázquez Jiménez;Mario Moreno Moreno;Liliana Palacios Huerta;Pedro Rosales Quintero;Alfredo Morales Sánchez
Instituto Nacional de Astrofísica,Óptica y Electrónica,Luis Enrique Erro No.1,72840,Sta.Ma.Tonantzintla,Puebla,MexicoInstituto Nacional de Astrofísica,Óptica y Electrónica,Luis Enrique Erro No.1,72840,Sta.Ma.Tonantzintla,Puebla,MexicoUPIIT,Instituto Politécnico Nacional,Tlaxcala 90000,MexicoInstituto Nacional de Astrofísica,Óptica y Electrónica,Luis Enrique Erro No.1,72840,Sta.Ma.Tonantzintla,Puebla,MexicoInstituto Nacional de Astrofísica,Óptica y Electrónica,Luis Enrique Erro No.1,72840,Sta.Ma.Tonantzintla,Puebla,Mexico
resistive switchingsilicon nanocrystalssilicon nitridememristor
resistive switchingsilicon nanocrystalssilicon nitridememristor
《半导体学报（英文版）》 2026 (4)
108-115,8
Authors would like to thank technicians Juan Aviles Bravo,Victor Aca Aca,Ignacio Juárez Ramírez,Armando Her-nandez Flores and Ramon Ramos Serrano for their support in devices fabrication.The help of Leticia Tecuapetla Quechol is also appreciated for Raman measurements.Special thanks are extended to Dr.Miriam Carolina Mendoza for TEM measure-ments and to Dr.Carlos Ramirez Netzahualcoyotl for his sup-port in FIB lamella preparation. A.Vázquez Jiménez acknowledges to the Secretaría de Ciencia,Humanidades,Tecnología e Innovación(Secihti)of Mexico for the PhD scholarship grant No.1080227.
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