首页|期刊导航|半导体学报(英文版)|p-GaN HEMT current reference and current mirror for high temperature application

p-GaN HEMT current reference and current mirror for high temperature applicationOA

p-GaN HEMT current reference and current mirror for high temperature application

Pingyu Cao;Kepeng Zhao;Zhengxuan Li;Yihao Xu;Ping Zhang;Harm Van Zalinge;Miao Cui;Fei Xue

Department of Electrical and Electronic Engineering,Xi'an Jiaotong-Liverpool University,Suzhou 215123,China||Department of Electrical Engineering and Electronics,University of Liverpool,Liverpool L69 3GJ,U.K.Department of Electrical and Electronic Engineering,Xi'an Jiaotong-Liverpool University,Suzhou 215123,China||Department of Electrical Engineering and Electronics,University of Liverpool,Liverpool L69 3GJ,U.K.Department of Electrical and Electronic Engineering,Xi'an Jiaotong-Liverpool University,Suzhou 215123,China||Department of Electrical Engineering and Electronics,University of Liverpool,Liverpool L69 3GJ,U.K.Department of Electrical and Electronic Engineering,Xi'an Jiaotong-Liverpool University,Suzhou 215123,China||Department of Electrical Engineering and Electronics,University of Liverpool,Liverpool L69 3GJ,U.K.Department of Communications and Networking,Xi'an Jiaotong-Liverpool University,Suzhou 215123,ChinaDepartment of Electrical Engineering and Electronics,University of Liverpool,Liverpool L69 3GJ,U.K.Department of Electrical and Electronic Engineering,Xi'an Jiaotong-Liverpool University,Suzhou 215123,China||Department of Electrical Engineering and Electronics,University of Liverpool,Liverpool L69 3GJ,U.K.Department of Electrical and Electronic Engineering,Xi'an Jiaotong-Liverpool University,Suzhou 215123,China||Department of Electrical Engineering and Electronics,University of Liverpool,Liverpool L69 3GJ,U.K.

p-GaN HEMTscurrent referencecurrent mirrorhigh-temperature applicationsupply voltage insensitivitymonolithic integration

p-GaN HEMTscurrent referencecurrent mirrorhigh-temperature applicationsupply voltage insensitivitymonolithic integration

《半导体学报(英文版)》 2026 (4)

93-101,9

This work was supported by XJTLU Research Develop-ment Fund(RDF-21-02-031,PGRS2206039).

10.1088/1674-4926/25070035

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