Enhanced low dose rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar devices:role of hydrogen in the passivation layerOA
Enhanced low dose rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar devices:role of hydrogen in the passivation layer
Shilong Gou;Wuying Ma;Zhibin Yao;Zujun Wang;Jiangkun Sheng;Yuanyuan Xue
National Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi'an 710024,ChinaNational Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi'an 710024,ChinaNational Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi'an 710024,ChinaNational Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi'an 710024,ChinaNational Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi'an 710024,ChinaNational Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi'an 710024,China
bipolar integrated circuitspassivation layersenhanced low dose rate sensitivitypre-irradiation elevated-tempera-ture stress
bipolar integrated circuitspassivation layersenhanced low dose rate sensitivitypre-irradiation elevated-tempera-ture stress
《半导体学报（英文版）》 2026 (4)
77-85,9
This work was supported by the National Natural Sci-ence Foundation of China(Grant No.12105229).
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