β-Ga_(2)O_(3) diodes with ultra-high surge current enabled by Ag/AMB-AlN flip-chip packagingOA

Owing to superior breakdown voltage and excellent robustness,the betagallium oxide(β-Ga_(2)O_(3))power device has emerged as a pivotal research frontier in power electronics.Although advanced packaging strategies,including nanosilver paste sintering,alumina direct bond copper(DBC)substrates,and flipchip structures,have been adopted to mitigate the intrinsic low thermal conductivity ofβ-Ga_(2)O_(3).However,a further reduction in the thermal resistance while maintaining high reliability remains a challenge.This study introduces a novel packaging methodology that synergistically integrates nano-silver films with aluminum nitride active metal brazing(AMB-AlN)substrates,achieving an ultra-low junction-to-case thermal resistance.By comprehensive reliability assessments onβ-Ga_(2)O_(3) Schottky barrier diodes(SBDs)and hetero-junction diodes(HJDs),the results demonstrate that the SBDs and HJDs exhibit surge current densities of 0.876 kA/cm^(2) and 0.778 kA/cm^(2),respectively,which represents a significant advancement in device performance benchmarks.These advancements provide critical insights into packaging design for highreliability ultrawide bandgap semiconductor systems.