首页|期刊导航|Journal of Electronic Science and Technology|Comprehensive evaluation on Si/SiC hybrid switch including single-pulse avalanche and short-circuit robustness

Comprehensive evaluation on Si/SiC hybrid switch including single-pulse avalanche and short-circuit robustnessOA

中文摘要

In this paper,a comprehensive evaluation on the silicon/silicon carbide(Si/SiC)hybrid switch is performed through experimental tests in terms of both electrical performance and robustness under extreme stresses.Based on the optional turn-on and turn-off delay times under the efficiency control mode obtained from the double-pulse test(DPT),both nondestructive and destructive single-pulse avalanche tests are conducted on the Si/SiC hybrid switch as well as on the two discrete device branches inside the hybrid switch.In addition,the avalanche voltage,critical avalanche energy,and peak avalanche current,which intrinsically characterize the unclamped-inductive-switching(UIS)avalanche characteristics,are carefully examined.In this way,the physical factors dominating the UIS characteristics of the hybrid switch,thus limiting its single-pulse avalanche withstand capability,are specifically and comprehensively identified;the underlying physical mechanisms are analyzed and revealed in depth,and how the gate control sequence affects the UIS characteristics of the hybrid switch is extensively investigated.We additionally carry out short-circuit(SC)tests under the fault-under-load(FUL)condition and perform a parallel in-depth analysis to experimentally determine which branch dominates the SC withstand capability of the hybrid switch.Our experimental study indicates that,for both SC robustness and single-pulse avalanche capability,the limiting factor is a single device branch among the two parallel discrete devices,and the UIS behavior is sensitive to the variation of the gate turn-off delay time Toff_delay.The study conducted in this paper not only provides deep academic insights into the electrical performance and reliability of the Si/SiC hybrid switch,but also offers fundamental theoretical principles and technical evidence to support its more efficient and long-term reliable applications of the hybrid switch in the industrial fields.

Hang-Zhi Liu;Yu-Ming Zhou

Anhui Provincial Key Laboratory of Power Electronics and Motion Control,Anhui University of Technology,Ma’anshan,243032,China School of Electrical and Information Engineering,Anhui University of Technology,Ma’anshan,243032,ChinaAnhui Provincial Key Laboratory of Power Electronics and Motion Control,Anhui University of Technology,Ma’anshan,243032,China School of Electrical and Information Engineering,Anhui University of Technology,Ma’anshan,243032,China

信息技术与安全科学

Gate switching delayHybrid switchSi/SiCSingle-pulse avalancheShort-circuit

《Journal of Electronic Science and Technology》 2026 (1)

P.86-98,13

supported in part by the Anhui Provincial Natural Science Foundation Youth Project(Category C)under Grant No.2508085QE184the Opening Project of Key Laboratory of Power Electronics and Motion Control of Anhui Higher Education Institutions under Grant No.PEMC24004the Anhui University of Technology Young Teachers Research Fund under Grant No.QZ202412the Scientific Research Startup Fund for Introduced Talents of Anhui University of Technology under Grant No.QD202340.

10.1016/j.jnlest.2026.100349

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