Investigation of photonic crystal surface-emitting laser in blue band based on porous-GaN claddingOA
Investigated theoretically is a photonic-crystal surface-emitting GaN laser based on surface-etched holes with a porous-GaN cladding layer.The porous GaN has a low refractive index,supporting effective confinement to the resonant mode,and the porous GaN is derived from as-grown GaN,eliminating the lattice mismatch issues typically associated with GaN platforms.Studied systematically is how the photoniccrystal lattice constant,air hole radius,etching depth,and porous-GaN refractive index affect the performance of the laser.The results show that the laser exhibits optimal overall performance when the lattice constant is 216 nm and the hole radius is 60 nm.The etching depth can be chosen between 30 and 100 nm,and the porous-GaN refractive index is preferably in the range of 1.7–1.9.The research achieves a quality factor as high as 1.9×10^(4),with a photonic-crystal-layer confinement factor of 4.24%and an active-layer confinement factor of 21.8%,along with a low threshold gain of 77 cm^(−1).
Hanzhe Li;Zixu Niu;Yuyi Cao;Wei Shen;Meixin Feng;Qifa Liu
College of Telecommunication and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,ChinaPortland Institute,Nanjing University of Posts and Telecommunications,Nanjing 210023,ChinaPortland Institute,Nanjing University of Posts and Telecommunications,Nanjing 210023,ChinaCollege of Telecommunication and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,ChinaKey Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,ChinaCollege of Telecommunication and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,China State Key Laboratory of Advanced Optical Communication Systems and Networks,Shanghai Jiao Tong University,Shanghai 200240,China
信息技术与安全科学
Photonic crystalSurface emitting laserPorous GaN claddingConfinement factorQuality factorThreshold gain
《Nanotechnology and Precision Engineering》 2026 (1)
P.2-10,9
funded by the Natural Science Foundation of Nanjing University of Posts and Telecommunications(Grant No.NY224125)the Open Fund of the State Key Laboratory of Advanced Optical Communication Systems and Networks(SJTU)(Grant No.2023GZKF018)the Postgraduate Research and Practice Innovation Program of Jiangsu Province(Grant Nos.KYCX24_1199 and SJCX24_0286).
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