首页|期刊导航|Nano Materials Science|Introducing oxygen evolution promoting hole defect states at BiVO_(4)surface for enhanced photoelectrochemical activity

Introducing oxygen evolution promoting hole defect states at BiVO_(4)surface for enhanced photoelectrochemical activityOA

中文摘要

Doping metal ions offer a promising strategy to tune the intrinsic and surface properties of BiVO_(4)for enhanced photoelectrochemical(PEC)activity.Given this,experimental and theoretical studies on cadmium(Cd)doping to BiVO_(4)photoanode were studied for PEC water splitting applications.The spectroscopic and PEC results indicate that the substitution of Cd at Bi lattice sites causes the reduction in the valence state of V^(5+)to V4+that creates hole trap states below the Fermi level of BiVO_(4).The introduced hole trap states at the BiVO_(4)surface suppress the charge recombination and provide effective hole transfer sites for the facile water oxidation reactions.The CdBiVO_(4)exhibited significantly higher photocurrent compared to the pristine BiVO_(4)reaching 3.5 mA cm^(-2)(with a hole scavenger)at 1.23 V vs RHE.Furthermore,doping increases the carrier density in the bulk of BiVO_(4)leading to improved charge separation,and charge transfer while reducing the hole transfer resistance at the interface.The Cd-doped BiVO_(4)exhibited a charge separation efficiency of 80%and with a 90%of overall water splitting faradaic efficiency.Importantly,the results of this work propose the advantages of doping metal ions at Bi lattice sites in BiVO_(4)for improved PEC activity.

Fatima Chmali;Basanth S.Kalanoor;Shankara S.Kalanur;Bruno G.Pollet

Universite de Montpellier,Place Eugene Bataillon,Bat.15,34095 Montpellier Cedex 5,FranceCentre for Atomic and Molecular Physics(CAMP),Manipal University,Manipal,IndiaGreenH2Lab,Hydrogen Research Institute(HRI),Department of Chemistry,Biochemistry and Physics,Universite Du Quebeca Trois-Rivieres(UQTR),3351 Boulevard des Forges,Trois Rivieres,QC G9A 5H7,CanadaGreenH2Lab,Hydrogen Research Institute(HRI),Department of Chemistry,Biochemistry and Physics,Universite Du Quebeca Trois-Rivieres(UQTR),3351 Boulevard des Forges,Trois Rivieres,QC G9A 5H7,Canada

化学化工

Cd dopingBiVO_(4)Hope trap statesBi lattice sitesStability

《Nano Materials Science》 2026 (2)

P.339-350,12

the support of the Natural Sciences and Engineering Research Council of Canada(NSERC)Tier 1 Canada Research Chair in Green Hydrogen Production,the Québec Ministère de l''Économie,de l''Innovation et de l''Énergie(MEIE)[Développement de catalyseurs et d''électrodes innovants,àfaibles coûts,performants et durables pour la production d''hydrogène vert,funding reference number 00393501]。

10.1016/j.nanoms.2024.09.009

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