基于TFE中SiON薄膜变化引起的OLED挖孔屏孔区彩虹纹现象OA
Rainbow phenomenon in the punch-hole area of OLED displays caused by SiON thin films changes in TFE
近年来随着手机薄型化趋势的发展以及对可靠性要求的提高,OLED(Organic Light-Emitting Diode)屏幕孔区出现彩虹纹现象的比例有一定的上升.本文定性、定量地分析了OLED屏幕孔区出现彩虹纹现象的原因,并基于此,建立了一套相对完备的可以相互交叉印证结果的多维度分析测试方法.对薄膜封装(Thin Film Encapsulation,TFE)膜层结构成分的进一步优化,可以最大限度地降低可靠性测试后出现与孔区彩虹纹相关的暗斑风险.通过裂片,分析了高温高湿实验条件下孔区发生彩虹纹的区域和位置;并以透射电子显微镜(Transmission Electron Microscope,TEM)、飞行时间二次离子质谱(Time of Flight Secondary Ion Mass Spectrometry,TOF-SIMS)和X射线光电子能谱(X-ray Photoelectron Spectroscopy,XPS)系统分析了孔区产生现象的原因.实验结果表明,CVD1(Chemical Vapor Deposition 1)中SiON在高温高湿条件下,会逐步向SiO膜层转化.TEM和TOF-SIMS的结果表明,被氧化后膜层的含氮量小于2%;XPS分峰结果显示,CVD1-2表面的SiON几乎全部转化为SiO膜层.通过将TFE中CVD1-1的SiON膜层折光率从1.72提升为1.76,CVD1-1的SiON膜层被氧化的深度下降了70%.该分析方法的建立不仅解释了孔区CVD膜层被氧化后生成的SiO是造成出现彩虹纹现象的原因,而且提出了彩虹纹区域对OLED面板孔区可靠性的影响.该方案策略为OLED显示未来在车载、IT(Information Technology)、广告牌等具有更高可靠性要求领域的应用提供了相应的解决思路.
In recent years,with the development of tendency toward thinner smartphones and higher reliability(RA)requirements,the proportion of OLED panels exhibiting rainbow phenomenon around the punch-hole area has increased.In response to this phenomenon,we established qualitative and quantitative analyses methods to identify the reasons of this phenomenon and conducted a comprehensive,mutually corroborative set of multi-dimensional analytical testing methods.Furthermore,with optimization of the TFE film-stack composition,the risk of dark spots could be minimized after RA tests,which is associated with rainbow-mura formation in OLED punch-hole displays.Through the cleavage of panel module,rainbow-mura around the punch-hole area was exactly located.Cross-sectional TEM,TOF-SIMS and XPS were then used to elucidate the formation mechanism.The data show that the SiON layer in CVD1 can be gradually converted to SiO under high temperature and high humidity conditions;TEM and TOF-SIMS results reveal that nitrogen content in SiON is below 2%after RA tests,while XPS peaks indicate that the SiON on the CVD1-2 surface has been almost completely transformed into SiO.By increasing the refractive index of the SiON layer from 1.72 to 1.76 in CVD1-1 of the TFE,the oxidation depth of the SiON film was reduced by 70%.The above-mentioned establishment of analytical method not only clarifies that the rainbow-mura phenomenon around the punch-hole is caused by the formation of SiO due to film oxidation,but also quantifies the influences of the punch-hole regions under long-term RA test.This strategic approach provides a viable solution path for OLED's future deployments in automotive,IT signage,and other applications with more stringent reliability requirements.
蔡汉坤;杨金金;李佐斌;涂秋梅;张国峰
天马微电子股份有限公司 厦门天马显示科技有限公司,福建 厦门 361105||天马微电子股份有限公司 武汉天马微电子有限公司,湖北 武汉 430070天马微电子股份有限公司 厦门天马显示科技有限公司,福建 厦门 361105||天马微电子股份有限公司 武汉天马微电子有限公司,湖北 武汉 430070天马微电子股份有限公司 厦门天马显示科技有限公司,福建 厦门 361105||天马微电子股份有限公司 武汉天马微电子有限公司,湖北 武汉 430070天马微电子股份有限公司 厦门天马显示科技有限公司,福建 厦门 361105||天马微电子股份有限公司 武汉天马微电子有限公司,湖北 武汉 430070天马微电子股份有限公司 厦门天马显示科技有限公司,福建 厦门 361105||天马微电子股份有限公司 武汉天马微电子有限公司,湖北 武汉 430070
信息技术与安全科学
彩虹纹现象OLED挖孔屏薄膜封装氮氧化硅氧化硅
rainbow phenomenonpunch-hole in OLED displaysthin-film encapsulationsilicon oxynitridesilicon oxide
《液晶与显示》 2026 (3)
353-362,10
国家重点研发计划(No.2023YFB3612002)厦门市科技计划(No.3502Z20231052)Supported by National Key Research and Development Program of China(No.2023YFB3612002)Xiamen Science and Technology Plan(No.3502Z20231052)
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