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直径150mm碲锌镉晶体生长温场控制研究OA

Temperature Field Control for the Growth of 150 mm Diameter CZT Crystals

中文摘要英文摘要

碲锌镉(CZT)是红外探测及核辐射探测领域的重要材料,作为制造下一代超大型阵列探测器的基础性材料受到广泛关注.针对垂直梯度凝固(VGF)法生长直径150 mm碲锌镉晶体过程中的技术难题,采用有限元模拟方法调控晶体生长过程中加热器输出功率,进而实现碲锌镉晶体生长温场调控,获得了全流程凸界面形状的晶体生长工艺,并且成功生长出高质量直径150 mm碲锌镉单晶,所生长晶体支持尺寸为100 mm×100 mm的红外用碲锌镉衬底制备.测试结果显示,碲锌镉晶体组分分布均匀,碲锌镉衬底(111)面摇摆曲线半峰全宽达15″以下,平均位错腐蚀坑密度低于1×104 cm-2.

Cadmium zinc telluride(CZT)is a crucial material in the fields of infrared detection and nuclear radiation detection,garnering significant attention as a foundational material for manufacturing next-generation ultra-large array detectors.To address the technical challenges in growing 150 mm diameter CZT crystals via the Vertical gradient freeze(VGF)method,finite element simulation was employed to regulate the heater output power during the crystal growth process.This approach enabled precise control over the temperature field during CZT crystal growth,achieving a convex solid-liquid interface shape throughout the entire growth process.Consequently,high-quality 150 mm diameter CZT single crystals were successfully grown.The grown crystals enabled the preparation of 100 mm×100 mm infrared CZT substrates.Test results demonstrate uniform composition distribution in the CZT crystals.The full width at half maximum(FWHM)of the rocking curve for the(111)plane of the CZT substrates is below 15″,and the average etch pit density(EPD)is less than 1×104 cm-2.

曹聪;刘江高;折伟林;范叶霞;马启司;李振兴

华北光电技术研究所,北京 100015华北光电技术研究所,北京 100015华北光电技术研究所,北京 100015华北光电技术研究所,北京 100015华北光电技术研究所,北京 100015华北光电技术研究所,北京 100015

数理科学

碲锌镉晶体垂直梯度凝固法有限元模拟界面形状控制组分均匀性晶体缺陷

CdZnTe crystalvertical gradient freeze methodfinite element simulationinterface shape controlcomposition uniformitycrystal defect

《人工晶体学报》 2026 (3)

359-367,9

10.16553/j.cnki.issn1000-985x.2025.0217

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