低温生长高质量MAPbI3钙钛矿单晶及其光电探测性能OA
Low-Temperature Grown High-Quality MAPbI3 Perovskite Single Crystals and Its Photodetection Performance
钙钛矿单晶凭借低缺陷密度、优异光伏性能、高湿稳定性及强抗离子迁移能力,在光电子器件领域彰显出巨大应用潜力.然而,钙钛矿单晶在光伏、发光二极管等核心应用场景中的效率仍落后于多晶薄膜,其发展进程受材料特性、生长工艺等多重因素制约.针对这一瓶颈,本文开发了一种以2-甲氧基乙醇(2ME)为溶剂的低温晶体生长策略.该策略能有效缓解钙钛矿单晶生长过程中的温度波动问题,显著减少缺陷态形成,同时,2ME较高的饱和蒸汽压可降低溶剂在单晶表面的残留,进一步优化晶体质量.与传统GBL溶剂相比,基于2ME溶剂制备的MAPbI3单晶性能实现全面提升:光致发光(PL)强度提高2.7倍,载流子寿命延长1.5倍,缺陷态密度降低16%,离子迁移活化能提升19%.将2ME溶剂制备的MAPbI3单晶应用于自驱动光电探测器,在0 V偏压下,器件响应度R达到0.55 A·W-1,比探测率D*高达0.80×1013 Jones,分别为GBL溶剂制备器件的1.72倍和1.59倍,且响应时间提升49%以上.本研究提出的低温晶体生长策略为钙钛矿单晶的性能优化提供了新思路,有望加速其在高端成像、光通信、量子探测等先进光电子器件领域的产业化应用.
Perovskite single crystals are regarded as highly promising materials for optoelectronic devices,owing to their low defect density,outstanding photovoltaic characteristics,high resistance to moisture,and effective suppression of ion migration.However,the efficiency of perovskite single crystals-based devices in applications such as photovoltaics and light-emitting diodes has remained inferior to that of polycrystalline thin-film counterparts,primarily due to limitations in material processing and crystal growth quality.To address these challenges,a low-temperature crystal growth strategy was developed using 2-methoxyethanol(2ME)as the solvent.This approach was designed to minimize thermal fluctuations during the crystallization process,thereby suppressing the formation of defect states.In addition,owing to the low boiling point of 2ME,solvent retention on the perovskite surface was significantly reduced.When compared with MAPbI3 single crystals prepared using conventional gamma-butyrolactone(GBL)solvent,the 2ME-grown crystals exhibited a 2.7-fold enhancement in photoluminescence(PL)intensity and a 1.5-fold extension of carrier lifetime.A reduction in defect state density by 16%was achieved,along with a 19%increase in the activation energy for ion migration.Furthermore,a self-powered photodetector fabricated from 2ME-derived MAPbI3 single crystals demonstrated a responsivity of 0.55 A·W-1 and a specific detectivity of 0.80×1013 Jones at 0 V bias.These values exceed those of devices based on GBL-grown crystals by factors of 1.72 and 1.59,respectively.The response speed was also markedly improved,with rise and fall times of 2.1 ms and 3.2 ms—representing a 54%and 49%enhancement over the GBL-based device(~4.6 ms rise,~6.3 ms fall).This study establishes a reliable low-temperature pathway for the production of high-quality,low-defect MAPbI3 single crystals via 2ME.The findings indicate that this method effectively enhances the optoelectronic performance and stability of perovskite single crystals,facilitating their application in advanced devices such as high-sensitivity imaging systems,optical communication modules,and quantum detection platforms.
刘东;郭可欣;何涛;李玉鑫;李大林;路斌;郭政;陈谦;张晓静;王雅雪;陈丹平
山东大学晶体材料研究院,济南 250100山东大学晶体材料研究院,济南 250100山东大学晶体材料研究院,济南 250100||山东大学深圳研究院,深圳 518057山东大学晶体材料研究院,济南 250100山东大学晶体材料研究院,济南 250100山东大学晶体材料研究院,济南 250100山东大学晶体材料研究院,济南 250100山东大学晶体材料研究院,济南 250100山东大学晶体材料研究院,济南 250100山东大学晶体材料研究院,济南 250100山东大学晶体材料研究院,济南 250100
数理科学
钙钛矿单晶低温生长溶剂残留离子迁移自驱动光电探测器
perovskite single crystallow-temperature growthsolvent residueion migrationself-poweredphotodetector
《人工晶体学报》 2026 (3)
349-358,10
国家自然科学基金(62474103)山东泰山学者青年专家计划(tsqn201909027)山东省优秀青年科学基金(ZR2022YQ63)广东省基础与应用基础研究基金(2023A1515011990)山东大学齐鲁青年学者计划山东省自然科学基金(ZR2024QF249)
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