金刚石n型掺杂研究进展与展望OA

Diamond is a typical representative of ultra-wide bandgap semiconductors.Theoretically,it has the advantages of a large bandgap,extremely high thermal conductivity,and high carrier mobility,making it an ideal material for high-frequency,high-power,and high-temperature electronic devices.Achieving efficient and stable semiconductor doping is an inevitable requirement for the application of diamond semiconductor electronic devices.Currently,through surface modification methods such as hydrogen termination/silicon termination and boron doping,diamond has achieved relatively excellent p-type doping,and p-type devices have also continuously made new breakthroughs.However,suitable dopants or material modification methods for diamond n-type semiconductor doping have not yet been found,and it still faces problems such as low doping efficiency,high activation energy,and difficult material growth.This paper systematically reviews the research progress at home and abroad on achieving n-type semiconductor doping in diamond through single-element doping and multi-element co-doping methods,analyzes the advantages and disadvantages of various doping schemes,and looks forward to the development prospects of diamond n-type doping,hoping to provide a reference for solving the problem of diamond n-type semiconductor doping.