掺铕氧化铟薄膜的制备与发光特性OA北大核心CSTPCD

Europium-doped indium oxide(In2O3:Eu)thin films are prepared on quartz substrates by RF magne-tron sputtering.The crystal structure,surface morphology and optical band gap of In2O3:Eu thin films are charac-terized by X-ray diffractometer(XRD),scanning electron microscope(SEM)and ultraviolet-visible spectropho-tometer.The photoluminescence(PL)spectra of In2O3:Eu thin films are measured at room temperature.The re-sults show that pure oxygen atmosphere and annealing improve the crystal quality of In2O3:Eu thin films.The transmittance and optical band gap of In2O3:Eu films increase after annealing.The luminescence of In2O3:Eu thin film is mainly the broadband emission of the defect level and the composite luminescence of 5D →7F3 of Eu3+.After annealing,the relative intensity of Eu3+luminescence peak increases.