基于边的光滑有限元法的封装模块电热力仿真研究OA

With the evolution of power electronic devices towards higher power density,the reliability of packaging and interconnection is a key bottleneck restricting their service life and performance.In particular,for insulated gate bipolar transistor(IGBT)modules operating under high-current conditions,various reliability issues become even more pronounced.Among the series of smoothed finite element method(S-FEM)variants proposed by scholars in recent years,the edge-based smoothed finite element method(ES-FEM)features lower sensitivity to mesh distortion and superior temporal stability,and exhibits higher computational accuracy.ES-FEM is extended to the field of multi-physics coupling simulation,and a novel electro-thermo-mechanical simulation method is proposed.The effectiveness and efficiency of the proposed method are verified through comparative analysis with the finite element method(FEM)via numerical case studies of an IGBT module.The results demonstrate that,with identical mesh discretization,ES-FEM yields more accurate results than FEM.