β-Ga2O3 diodes with ultra-high surge current enabled by Ag/AMB-AlN flip-chip packagingOA
β-Ga2O3 diodes with ultra-high surge current enabled by Ag/AMB-AlN flip-chip packaging
Zi-Lin Hao;Chen-Yi Dai;Zheng Zhang;Yuan-Xi Jia;Xue-Feng Wu
Beijing Microelectronics Technology Institute,Beijing,100076,ChinaBeijing Microelectronics Technology Institute,Beijing,100076,China||School of Integrated Circuits,Tsinghua University,Beijing,100084,ChinaBeijing Microelectronics Technology Institute,Beijing,100076,ChinaBeijing Yuxiang Electronics Co.,Ltd.,Beijing,100010,ChinaBeijing Microelectronics Technology Institute,Beijing,100076,China
Flip-chip packagingSurge robustnessThermal resistanceUltrawide bandgap semiconductorβ-Ga2O3
Flip-chip packagingSurge robustnessThermal resistanceUltrawide bandgap semiconductorβ-Ga2O3
《电子科技学刊》 2026 (1)
77-85,9
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